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1. WO2013147097 - METHOD FOR PRODUCING NITRIDE SINGLE CRYSTAL

Publication Number WO/2013/147097
Publication Date 03.10.2013
International Application No. PCT/JP2013/059406
International Filing Date 28.03.2013
IPC
C30B 29/38 2006.01
CCHEMISTRY; METALLURGY
30CRYSTAL GROWTH
BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
29Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
10Inorganic compounds or compositions
38Nitrides
C30B 7/10 2006.01
CCHEMISTRY; METALLURGY
30CRYSTAL GROWTH
BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
7Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions
10by application of pressure, e.g. hydrothermal processes
CPC
C30B 29/403
CCHEMISTRY; METALLURGY
30CRYSTAL GROWTH
BSINGLE-CRYSTAL-GROWTH
29Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
10Inorganic compounds or compositions
40AIIIBV compounds ; wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
403AIII-nitrides
C30B 7/105
CCHEMISTRY; METALLURGY
30CRYSTAL GROWTH
BSINGLE-CRYSTAL-GROWTH
7Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions
10by application of pressure, e.g. hydrothermal processes
105using ammonia as solvent, i.e. ammonothermal processes
Applicants
  • 三菱化学株式会社 MITSUBISHI CHEMICAL CORPORATION [JP]/[JP]
  • 国立大学法人東北大学 TOHOKU UNIVERSITY [JP]/[JP]
  • 株式会社日本製鋼所 THE JAPAN STEEL WORKS, LTD. [JP]/[JP]
Inventors
  • 石黒 徹 ISHIGURO Toru
  • 包 全喜 BAO Quanxi
  • 横山 千昭 YOKOYAMA Chiaki
  • 冨田 大輔 TOMIDA Daisuke
  • 秩父 重英 CHICHIBU Shigefusa
  • 茅野 林造 KAYANO Rinzo
  • 植田 睦男 UEDA Mutsuo
  • 斉藤 真 SAITO Makoto
  • 鏡谷 勇二 KAGAMITANI Yuji
Agents
  • 濱田 百合子 HAMADA Yuriko
Priority Data
2012-07801029.03.2012JP
2012-07801129.03.2012JP
2013-05347415.03.2013JP
Publication Language Japanese (JA)
Filing Language Japanese (JA)
Designated States
Title
(EN) METHOD FOR PRODUCING NITRIDE SINGLE CRYSTAL
(FR) PROCÉDÉ DE FABRICATION D'UN MONOCRISTAL DE NITRURE
(JA) 窒化物単結晶の製造方法
Abstract
(EN)
The first purpose of the present invention is to provide a method for efficiently growing a nitride single crystal even under low-pressure conditions. The present invention relates to a method for producing a nitride single crystal, the method comprising a step for controlling the pressure inside a reactor holding a seed crystal that has a hexagonal crystal structure, a nitrogen-containing solvent, a mineralizer that contains fluorine atoms, and a raw material so that the pressure reaches 5-200 MPa and the solvent reaches a supercritical state and/or subcritical state, and growing a nitride single crystal on the surface of the seed crystal.
(FR)
La présente invention a pour premier but de proposer un procédé de croissance efficace d'un monocristal de nitrure même dans des conditions de basse pression. La présente invention concerne un procédé de fabrication d'un monocristal de nitrure, le procédé comprenant une étape de contrôle de la pression à l'intérieur d'un réacteur contenant un germe cristallin qui a une structure cristalline hexagonale, un solvant contenant de l'azote, un minéralisateur qui contient des atomes de fluor et une matière première de telle sorte que la pression atteigne 5-200 MPa et que le solvant atteigne un état supercritique et/ou un état sous-critique, et de croissance d'un monocristal de nitrure sur la surface du germe cristallin.
(JA)
 本発明は、低圧条件下においても効率良く窒化物単結晶を成長させる方法を提供することを第1の目的とする。本発明は、六方晶系の結晶構造を有する種結晶、窒素含有溶媒、フッ素原子を含有する鉱化剤及び原料を入れた反応容器内の圧力を5~200MPaとし、溶媒が超臨界状態及び亜臨界状態の少なくともいずれか一方の状態となるように制御して種結晶の表面に窒化物結晶を成長させる工程を含む、窒化物単結晶の製造方法に関する。
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