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1. (WO2013147097) METHOD FOR PRODUCING NITRIDE SINGLE CRYSTAL
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2013/147097    International Application No.:    PCT/JP2013/059406
Publication Date: 03.10.2013 International Filing Date: 28.03.2013
IPC:
C30B 29/38 (2006.01), C30B 7/10 (2006.01)
Applicants: MITSUBISHI CHEMICAL CORPORATION [JP/JP]; 1-1, Marunouchi 1-chome, Chiyoda-ku, Tokyo 1008251 (JP).
TOHOKU UNIVERSITY [JP/JP]; 2-1-1, Katahira, Aoba-ku, Sendai-shi, Miyagi 9808577 (JP).
THE JAPAN STEEL WORKS, LTD. [JP/JP]; 11-1, Osaki 1-chome, Shinagawa-ku, Tokyo 1410032 (JP)
Inventors: ISHIGURO Toru; .
BAO Quanxi; .
YOKOYAMA Chiaki; .
TOMIDA Daisuke; .
CHICHIBU Shigefusa; .
KAYANO Rinzo; .
UEDA Mutsuo; .
SAITO Makoto; .
KAGAMITANI Yuji;
Agent: HAMADA Yuriko; Eikoh Patent Firm, Toranomon East Bldg. 10F, 7-13, Nishi-Shimbashi 1-chome, Minato-ku, Tokyo 1050003 (JP)
Priority Data:
2012-078010 29.03.2012 JP
2012-078011 29.03.2012 JP
2013-053474 15.03.2013 JP
Title (EN) METHOD FOR PRODUCING NITRIDE SINGLE CRYSTAL
(FR) PROCÉDÉ DE FABRICATION D'UN MONOCRISTAL DE NITRURE
(JA) 窒化物単結晶の製造方法
Abstract: front page image
(EN)The first purpose of the present invention is to provide a method for efficiently growing a nitride single crystal even under low-pressure conditions. The present invention relates to a method for producing a nitride single crystal, the method comprising a step for controlling the pressure inside a reactor holding a seed crystal that has a hexagonal crystal structure, a nitrogen-containing solvent, a mineralizer that contains fluorine atoms, and a raw material so that the pressure reaches 5-200 MPa and the solvent reaches a supercritical state and/or subcritical state, and growing a nitride single crystal on the surface of the seed crystal.
(FR)La présente invention a pour premier but de proposer un procédé de croissance efficace d'un monocristal de nitrure même dans des conditions de basse pression. La présente invention concerne un procédé de fabrication d'un monocristal de nitrure, le procédé comprenant une étape de contrôle de la pression à l'intérieur d'un réacteur contenant un germe cristallin qui a une structure cristalline hexagonale, un solvant contenant de l'azote, un minéralisateur qui contient des atomes de fluor et une matière première de telle sorte que la pression atteigne 5-200 MPa et que le solvant atteigne un état supercritique et/ou un état sous-critique, et de croissance d'un monocristal de nitrure sur la surface du germe cristallin.
(JA) 本発明は、低圧条件下においても効率良く窒化物単結晶を成長させる方法を提供することを第1の目的とする。本発明は、六方晶系の結晶構造を有する種結晶、窒素含有溶媒、フッ素原子を含有する鉱化剤及び原料を入れた反応容器内の圧力を5~200MPaとし、溶媒が超臨界状態及び亜臨界状態の少なくともいずれか一方の状態となるように制御して種結晶の表面に窒化物結晶を成長させる工程を含む、窒化物単結晶の製造方法に関する。
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG).
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)