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1. WO2013146646 - SEMICONDUCTOR LASER DEVICE

Publication Number WO/2013/146646
Publication Date 03.10.2013
International Application No. PCT/JP2013/058516
International Filing Date 25.03.2013
IPC
H01S 5/022 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
5Semiconductor lasers
02Structural details or components not essential to laser action
022Mountings; Housings
H01L 23/36 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
23Details of semiconductor or other solid state devices
34Arrangements for cooling, heating, ventilating or temperature compensation
36Selection of materials, or shaping, to facilitate cooling or heating, e.g. heat sinks
CPC
H01L 2224/32225
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2224Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
31Structure, shape, material or disposition of the layer connectors after the connecting process
32of an individual layer connector
321Disposition
32151the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
32221the body and the item being stacked
32225the item being non-metallic, e.g. insulating substrate with or without metallisation
H01L 23/3732
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
23Details of semiconductor or other solid state devices
34Arrangements for cooling, heating, ventilating or temperature compensation ; ; Temperature sensing arrangements
36Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
373Cooling facilitated by selection of materials for the device ; or materials for thermal expansion adaptation, e.g. carbon
3732Diamonds
H01S 5/023
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
5Semiconductor lasers
02Structural details or components not essential to laser action
022Mountings; Housings
023Mount members, e.g. sub-mount members
H01S 5/0233
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
5Semiconductor lasers
02Structural details or components not essential to laser action
022Mountings; Housings
0233Mounting configuration of laser chips
H01S 5/0235
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
5Semiconductor lasers
02Structural details or components not essential to laser action
022Mountings; Housings
0235Method for mounting laser chips
H01S 5/0237
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
5Semiconductor lasers
02Structural details or components not essential to laser action
022Mountings; Housings
0235Method for mounting laser chips
02355Fixing laser chips on mounts
0237by soldering
Applicants
  • ウシオ電機株式会社 USHIO DENKI KABUSHIKI KAISHA [JP]/[JP]
Inventors
  • 別所 和典 BESSHO, Kazunori
Agents
  • 大井 正彦 OHI, Masahiko
Priority Data
2012-07888930.03.2012JP
Publication Language Japanese (JA)
Filing Language Japanese (JA)
Designated States
Title
(EN) SEMICONDUCTOR LASER DEVICE
(FR) DISPOSITIF DE LASER À SEMI-CONDUCTEURS
(JA) 半導体レーザ装置
Abstract
(EN)
The objective of the present invention is to provide a semiconductor laser device equipped with a sub mount unit that can improve semiconductor laser device properties, the unit having a diamond sub mount structure in which the high thermal conductivity of diamond is maintained and a linear thermal expansion rate is adjusted. The sub mount unit of this semiconductor laser device comprises a first sub mount material the linear thermal expansion rate of which is different from that of the semiconductor element and a second sub mount material the linear thermal expansion rate of which is greater than that of the semiconductor element and the first sub mount material. A first sub mount material portion made out of the first sub mount material and a second sub mount material portion made out of the second sub mount material are disposed so as to alternate with one another in the longitudinal direction of the semiconductor element. The first sub mount material is coupled to the semiconductor element via a coupling material, and the sum of the total length of the first sub mount material and the second sub mount material is equal to the length of the semiconductor element in the longitudinal direction either at room temperature or at the coupling temperature of the coupling material.
(FR)
L'invention a pour objectif de fournir un dispositif de laser à semi-conducteurs qui tout en permettant de réaliser une amélioration des spécificités de ce dispositif de laser à semi-conducteurs, et tout en assurant une conductivité thermique élevée telle qu'en possède un diamant, est équipé d'une partie embase possédant une structure embase de diamant de coefficient de dilatation thermique linéaire ajusté. Dans ce dispositif de laser à semi-conducteurs, la partie embase est disposée de sorte qu'une première portion de matériau embase et une seconde portion de matériau embase constituées d'un premier matériau embase de coefficient de dilatation thermique linéaire différent de celui d'un élément semi-conducteur, et d'un second matériau embase de coefficient de dilatation thermique linéaire supérieur à ceux de l'élément semi-conducteur et du premier matériau embase, sont positionnées en alternance dans la direction longitudinale de l'élément semi-conducteur, respectivement à l'aide du premier matériau d'embase et du second matériau d'embase. Le premier matériau embase est lié à l'élément semi-conducteur par l'intermédiaire d'un matériau de liaison, et la somme des longueurs totales du premier et du second matériau d'embase, à température ambiante ou à température de liaison avec le matériau de liaison, constitue une relation égale avec la longueur de l'élément semi-conducteur dans sa direction longitudinale.
(JA)
 本発明は、半導体レーザ装置の特性向上を図ることができ、ダイヤモンドの有する高い熱伝導率を確保すると共に、線熱膨張率を調整したダイヤモンドサブマウント構造を有するサブマウント部を備えた半導体レーザ装置を提供することを目的とする。 本発明の半導体レーザ装置は、サブマウント部が、半導体素子と線熱膨張率の異なる第1のサブマウント材と、半導体素子および第1のサブマウント材より線熱膨張率が大きい第2のサブマウント材とから成り、第1のサブマウント材による第1のサブマウント材部分と、第2のサブマウント材による第2のサブマウント材部分とが、半導体素子の長手方向に交互に位置するように配置され、第1のサブマウント材が半導体素子と接合材を介して接合されており、室温でも、接合材との接合温度でも、第1のサブマウント材の全長と第2のサブマウント材との全長の和が、半導体素子の長手方向の長さと等しい関係にあるものである。
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