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1. WO2013146595 - SUBSTRATE PROCESSING APPARATUS, METHOD FOR CONTROLLING SUBSTRATE PROCESSING APPARATUS, METHOD FOR MAINTAINING SUBSTRATE PROCESSING APPARATUS, AND RECORDING MEDIUM

Publication Number WO/2013/146595
Publication Date 03.10.2013
International Application No. PCT/JP2013/058323
International Filing Date 22.03.2013
IPC
H01L 21/31 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
31to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After-treatment of these layers; Selection of materials for these layers
C23C 16/44 2006.01
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (CVD) processes
44characterised by the method of coating
H01L 21/205 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
20Deposition of semiconductor materials on a substrate, e.g. epitaxial growth
205using reduction or decomposition of a gaseous compound yielding a solid condensate, i.e. chemical deposition
CPC
C23C 16/4405
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
44characterised by the method of coating
4401Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
4405Cleaning of reactor or parts inside the reactor by using reactive gases
C23C 16/52
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
44characterised by the method of coating
52Controlling or regulating the coating process
Applicants
  • 株式会社日立国際電気 HITACHI KOKUSAI ELECTRIC INC. [JP]/[JP]
Inventors
  • 西浦 進 NISHIURA, Susumu
  • 猪島 かおり INOSHIMA, Kaori
  • 三井 裕之 MITSUI, Hiroyuki
  • 越湖 裕 EKKO, Hiroshi
Priority Data
2012-08212830.03.2012JP
Publication Language Japanese (JA)
Filing Language Japanese (JA)
Designated States
Title
(EN) SUBSTRATE PROCESSING APPARATUS, METHOD FOR CONTROLLING SUBSTRATE PROCESSING APPARATUS, METHOD FOR MAINTAINING SUBSTRATE PROCESSING APPARATUS, AND RECORDING MEDIUM
(FR) APPAREIL DE TRAITEMENT DE SUBSTRAT, PROCÉDÉ DE COMMANDE D'APPAREIL DE TRAITEMENT DE SUBSTRAT, PROCÉDÉ D'ENTRETENIEN D'UN APPAREIL DE TRAITEMENT DE SUBSTRAT ET SUPPORT D'ENREGISTREMENT
(JA) 基板処理装置、基板処理装置の制御方法、基板処理装置の保守方法及び記録媒体
Abstract
(EN)
In order to control execution of respective maintenance recipes for cleaning, and to suitably execute the maintenance recipes, provided is a substrate processing apparatus that is configured of at least: an operation unit, which is provided with a storage unit that stores at least various kinds of recipes including a recipe for processing a member that constitutes the inside of a reacting furnace in which substrate processing is performed, and a recipe for processing an air release pipe having flowing therein a gas released from the inside of the reacting furnace, and which is also provided with a display unit that displays set conditions for executing the recipes at least on an operation screen; and a control unit that executes the recipes that met the set conditions. Specifically, the operation unit is provided with a recipe control unit, which controls execution of, among the recipes stored in the storage unit, the recipe for processing, on the basis of the set conditions, the member constituting the inside of the reacting furnace in which the substrate processing is performed, and the recipe for processing the air release pipe on the basis of the set conditions.
(FR)
Afin de commander l'exécution de chaque procédure d'entretien de nettoyage et d'exécuter de manière appropriée les procédures d'entretien, l'invention concerne un appareil de traitement de substrat qui est constitué d'au moins : une unité de fonctionnement, qui est dotée d'une unité de stockage qui stocke au moins différents types de procédures y compris une procédure de traitement d'un élément qui constitue l'intérieur d'un four de réaction dans lequel est effectué le traitement de substrat, et une procédure de traitement d'un tuyau de libération d'air dans lequel s'écoule un gaz libéré de l'intérieur du four de réaction et qui est également doté d'une unité d'affichage qui affiche des conditions définies pour exécuter les procédures au moins sur un écran de fonctionnement ; et une unité de commande qui exécute les procédures qui satisfont aux conditions définies. Spécifiquement, l'unité de fonctionnement est pourvue d'une unité de commande de procédure, qui commande l'exécution, parmi les procédures stockées dans l'unité de stockage, de la procédure de traitement, sur la base des conditions définies, de l'élément constituant l'intérieur du four de réaction dans lequel le substrat traitement est effectué, et la procédure de traitement du tuyau de libération d'air sur la base de l'ensemble conditions.
(JA)
クリーニングするためのメンテナンス用レシピの実行をそれぞれ制御し、適切にメンテナンス用レシピを実行させるために、基板処理が行われる反応炉内を構成する部材を処理するレシピおよび前記反応炉内から排気されるガスが流れる排気管を処理するレシピと、を含む各種レシピを少なくとも格納する記憶部と、レシピを実行する設定条件を少なくとも操作画面に表示する表示部とを備えた操作部と、設定条件を満たしたレシピを実行する制御部と、で少なくとも構成された基板処理装置が提供され、特に、操作部は、記憶部に格納されたレシピのうち、設定条件に基づいて基板処理が行われる反応炉内を構成する部材を処理するレシピと、排気管を処理するレシピのそれぞれの実行を制御するレシピ制御部を備えている。 
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