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|1. (WO2013146444) SILICON CARBIDE SEMICONDUCTOR ELEMENT AND METHOD FOR PRODUCING SAME|
|Applicants:||FUJI ELECTRIC CO., LTD.
NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY
|Title:||SILICON CARBIDE SEMICONDUCTOR ELEMENT AND METHOD FOR PRODUCING SAME|
A method for producing a silicon carbide semiconductor element comprising a drift layer that has the role of maintaining high pressure resistance on the front surface side of a semiconductor substrate formed from silicon carbide and an ohmic electrode on the back surface side of the semiconductor substrate comprises the additional step of, prior to forming the ohmic electrode on the back surface side of the semiconductor substrate, dicing the element active region on the surface of the side opposite the drift layer of the semiconductor substrate such that there is at least one dicing line. As a result, provided are a silicon carbide semiconductor element having a structure with which substrate strength is retained, even when the semiconductor substrate is thin in order to lower on-resistance, and wafer cracking during the wafer process can be minimized, as well as a method for producing the same.