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1. (WO2013146444) SILICON CARBIDE SEMICONDUCTOR ELEMENT AND METHOD FOR PRODUCING SAME

Pub. No.:    WO/2013/146444    International Application No.:    PCT/JP2013/057738
Publication Date: Fri Oct 04 01:59:59 CEST 2013 International Filing Date: Tue Mar 19 00:59:59 CET 2013
IPC: H01L 21/329
H01L 21/28
H01L 29/12
H01L 29/47
H01L 29/78
H01L 29/868
H01L 29/872
Applicants: FUJI ELECTRIC CO., LTD.
富士電機株式会社
NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY
独立行政法人産業技術総合研究所
Inventors: TSUJI, Takashi
辻 崇
KINOSHITA, Akimasa
木下 明将
FUKUDA, Kenji
福田 憲司
Title: SILICON CARBIDE SEMICONDUCTOR ELEMENT AND METHOD FOR PRODUCING SAME
Abstract:
A method for producing a silicon carbide semiconductor element comprising a drift layer that has the role of maintaining high pressure resistance on the front surface side of a semiconductor substrate formed from silicon carbide and an ohmic electrode on the back surface side of the semiconductor substrate comprises the additional step of, prior to forming the ohmic electrode on the back surface side of the semiconductor substrate, dicing the element active region on the surface of the side opposite the drift layer of the semiconductor substrate such that there is at least one dicing line. As a result, provided are a silicon carbide semiconductor element having a structure with which substrate strength is retained, even when the semiconductor substrate is thin in order to lower on-resistance, and wafer cracking during the wafer process can be minimized, as well as a method for producing the same.