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1. WO2013146195 - ELECTROCONDUCTIVE PATTERN, ELECTRIC CIRCUIT, ELECTROMAGNETIC WAVE SHIELD, AND METHOD FOR MANUFACTURING ELECTROCONDUCTIVE PATTERN

Publication Number WO/2013/146195
Publication Date 03.10.2013
International Application No. PCT/JP2013/056486
International Filing Date 08.03.2013
IPC
H05K 3/38 2006.01
HELECTRICITY
05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
3Apparatus or processes for manufacturing printed circuits
38Improvement of the adhesion between the insulating substrate and the metal
H05K 1/09 2006.01
HELECTRICITY
05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
1Printed circuits
02Details
09Use of materials for the metallic pattern
H05K 3/12 2006.01
HELECTRICITY
05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
3Apparatus or processes for manufacturing printed circuits
10in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
12using printing techniques to apply the conductive material
H05K 9/00 2006.01
HELECTRICITY
05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
9Screening of apparatus or components against electric or magnetic fields
CPC
H01L 21/288
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
18the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
28Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
283Deposition of conductive or insulating materials for electrodes ; conducting electric current
288from a liquid, e.g. electrolytic deposition
H01L 21/321
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
18the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
31to form insulating layers thereon, e.g. for masking or by using photolithographic techniques
3205Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
321After treatment
H01L 23/5328
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
23Details of semiconductor or other solid state devices
52Arrangements for conducting electric current within the device in operation from one component to another ; , i.e. interconnections, e.g. wires, lead frames
522including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
532characterised by the materials
53204Conductive materials
5328containing conductive organic materials or pastes, e.g. conductive adhesives, inks
H01L 2924/0002
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2924Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
0001Technical content checked by a classifier
0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
H05K 1/0298
HELECTRICITY
05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
1Printed circuits
02Details
0296Conductive pattern lay-out details not covered by sub groups H05K1/02 - H05K1/0295
0298Multilayer circuits
H05K 1/09
HELECTRICITY
05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
1Printed circuits
02Details
09Use of materials for the ; conductive, e.g. ; metallic pattern
Applicants
  • DIC株式会社 DIC CORPORATION [JP]/[JP]
Inventors
  • 村川 昭 MURAKAWA Akira
  • 白髪 潤 SHIRAKAMI Jun
  • 冨士川 亘 FUJIKAWA Wataru
  • 斉藤 公恵 SAITOU Yukie
Agents
  • 河野 通洋 KONO Michihiro
Priority Data
2012-07376528.03.2012JP
Publication Language Japanese (JA)
Filing Language Japanese (JA)
Designated States
Title
(EN) ELECTROCONDUCTIVE PATTERN, ELECTRIC CIRCUIT, ELECTROMAGNETIC WAVE SHIELD, AND METHOD FOR MANUFACTURING ELECTROCONDUCTIVE PATTERN
(FR) MOTIF ÉLECTROCONDUCTEUR, CIRCUIT ÉLECTRIQUE, BLINDAGE CONTRE LES ONDES ÉLECTROMAGNÉTIQUES ET PROCÉDÉ DE FABRICATION D'UN MOTIF ÉLECTROCONDUCTEUR
(JA) 導電性パターン、電気回路、電磁波シールド、及び、導電性パターンの製造方法
Abstract
(EN)
The present invention addresses the problem of providing an electroconductive pattern which has such a high level of adhesion that an electroconductive layer comprising an electroconductive substance such as silver, etc. does not peel off from a primer layer over time. An electroconductive pattern according to the present invention, wherein an electroconductive layer (A) that comprises a compound (a1) having a basic nitrogen atom-containing group and an electroconductive substance (a2), a primer layer (B) that comprises a compound (b1) containing a functional group [X], and a supporting layer (C) are stacked, is characterized in that the basic nitrogen atom-containing group of the compound (a1) in the electroconductive layer (A) is reacted with the functional group [X] of the compound (b1) in the primer layer (B) to thereby form a bond.
(FR)
La présente invention a pour but de proposer un motif électroconducteur qui a un niveau élevé d'adhérence tel qu'une couche électroconductrice comprenant une substance électroconductrice telle que de l'argent, etc. ne subit pas de retrait par pelage d'une couche primaire au cours du temps. Un motif électroconducteur selon la présente invention, dans lequel une couche électroconductrice (A) qui comprend un composé (a1) ayant un groupe à teneur en atome d'azote basique et une substance électroconductrice (a2), une couche de primaire (B) qui comprend un composé (b1) contenant un groupe fonctionnel [X], et une couche de support (C) sont empilées, est caractérisé en ce que le groupe à teneur en atome d'azote basique du composé (a1) dans la couche électroconductrice (A) est mis à réagir avec le groupe fonctionnel [X] du composé (b1) dans la couche de primaire (B) pour former par là une liaison.
(JA)
本発明が解決しようとする課題は、例えば銀等の導電性物質を含む導電層が経時的にプライマー層から剥離することのないレベルの密着性を備えた導電性パターンを提供することである。本発明は、塩基性窒素原子含有基を有する化合物(a1)及び導電性物質(a2)を含有する導電層(A)と、官能基[X]を有する化合物(b1)を含有するプライマー層(B)と、支持体層(C)とが積層された導電性パターンであって、前記導電層(A)に含まれる前記化合物(a1)が有する塩基性窒素原子含有基と、前記プライマー層(B)に含まれる前記化合物(b1)が有する官能基[X]とを反応させることによって結合を形成したものであることを特徴とする導電性パターンに関するものである。
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