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1. (WO2013146118) SUBSTRATE PROCESSING APPARATUS AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD
Latest bibliographic data on file with the International Bureau   

Pub. No.: WO/2013/146118 International Application No.: PCT/JP2013/055961
Publication Date: 03.10.2013 International Filing Date: 05.03.2013
IPC:
H01L 21/31 (2006.01) ,H01L 21/268 (2006.01) ,H05B 6/64 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30
Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
31
to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After-treatment of these layers; Selection of materials for these layers
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
26
Bombardment with wave or particle radiation
263
with high-energy radiation
268
using electromagnetic radiation, e.g. laser radiation
H ELECTRICITY
05
ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
B
ELECTRIC HEATING; ELECTRIC LIGHTING NOT OTHERWISE PROVIDED FOR
6
Heating by electric, magnetic, or electromagnetic fields
64
Heating using microwaves
Applicants: HITACHI KOKUSAI ELECTRIC INC.[JP/JP]; 14-1, Sotokanda 4-chome, Chiyoda-ku, Tokyo 1018980, JP
Inventors: MINAMI KAICHIRO; JP
OGAWA UNRYU; JP
AKAO TOKUNOBU; JP
YASHIMA SHINJI; JP
UMEKAWA ATSUSHI; JP
OKUNO MASAHISA; JP
JOUDA TAKUYA; JP
Priority Data:
2012-06884926.03.2012JP
Title (EN) SUBSTRATE PROCESSING APPARATUS AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD
(FR) APPAREIL DE TRAITEMENT DE SUBSTRAT ET PROCÉDÉ DE FABRICATION D'UN DISPOSITIF À SEMI-CONDUCTEURS
(JA) 基板処理装置および半導体装置の製造方法
Abstract:
(EN) This substrate processing apparatus is configured to be provided with: a processing space having a substrate supporting unit for supporting a substrate; a microwave supply section, which supplies microwaves to the processing space; a gas supply unit, which supplies an inert gas to the processing space; a gas discharging unit, which discharges the gas from the processing space; an oxygen concentration detecting unit, which detects oxygen concentration of the gas in the processing space; and a control unit, which controls the microwaves to be supplied from the microwave supply unit to the processing space, in the cases where the oxygen concentration of the gas in the processing space, said oxygen concentration having been detected by means of the oxygen concentration detecting unit, is equal to or less than a threshold value in a state wherein the substrate is supported by the substrate supporting unit.
(FR) La présente invention se rapporte à un appareil de traitement de substrat qui est configuré pour être pourvu : d'un espace de traitement qui comporte une unité de support de substrat destinée à supporter un substrat ; d'une section de transmission de micro-ondes qui transmet des micro-ondes à l'espace de traitement ; d'une unité d'alimentation en gaz qui fournit un gaz inerte à l'espace de traitement ; d'une unité de décharge de gaz qui décharge le gaz de l'espace de traitement ; d'une unité de détection de la concentration en oxygène qui détecte la concentration en oxygène du gaz dans l'espace de traitement ; et d'une unité de commande qui commande les micro-ondes qui doivent être transmises depuis l'unité de transmission de micro-ondes à l'espace de traitement dans le cas où la concentration en oxygène du gaz dans l'espace de traitement, ladite concentration en oxygène ayant été détectée au moyen de l'unité de détection de la concentration en oxygène, est égale ou inférieure à une valeur de seuil dans un état dans lequel le substrat est supporté par l'unité de support de substrat.
(JA) 基板を支持する基板支持部を有する処理空間と、前記処理空間にマイクロ波を供給するマイクロ波供給部と、前記処理空間に不活性ガスを供給するガス供給部と、前記処理空間からガスを排出するガス排出部と、前記処理空間のガスの酸素濃度を検出する酸素濃度検出部と、前記基板支持部に基板が支持された状態で、前記酸素濃度検出部が検出した前記処理空間のガスの酸素濃度が閾値以下である場合に、前記マイクロ波供給部から前記処理空間にマイクロ波を供給するよう制御する制御部と、を備えるように基板処理装置を構成する。
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)