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1. (WO2013145555) INTEGRATED DEVICE
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2013/145555    International Application No.:    PCT/JP2013/001218
Publication Date: 03.10.2013 International Filing Date: 28.02.2013
Chapter 2 Demand Filed:    26.12.2013    
IPC:
H01L 25/04 (2006.01), G01L 9/00 (2006.01), H01L 21/76 (2006.01), H01L 21/822 (2006.01), H01L 25/18 (2006.01), H01L 27/04 (2006.01)
Applicants: TOHOKU UNIVERSITY [JP/JP]; 2-1-1 Katahira, Aoba-ku, Sendai-shi, Miyagi 9808577 (JP) (AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BE, BF, BG, BH, BJ, BN, BR, BW, BY, BZ, CA, CF, CG, CH, CI, CL, CM, CN, CO, CR, CU, CY, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, FR, GA, GB, GD, GE, GH, GM, GN, GQ, GR, GT, GW, HN, HR, HU, ID, IE, IL, IN, IS, IT, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LV, LY, MA, MC, MD, ME, MG, MK, ML, MN, MR, MT, MW, MX, MY, MZ, NA, NE, NG, NI, NL, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SC, SD, SE, SG, SI, SK, SL, SM, SN, ST, SV, SY, SZ, TD, TG, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, UZ, VC, VN, ZA, ZM, ZW only).
KABUSHIKI KAISHA TOYOTA CHUO KENKYUSHO [JP/JP]; 41-1, Yokomichi, Nagakute-shi, Aichi 4801192 (JP) (AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BE, BF, BG, BH, BJ, BN, BR, BW, BY, BZ, CA, CF, CG, CH, CI, CL, CM, CN, CO, CR, CU, CY, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, FR, GA, GB, GD, GE, GH, GM, GN, GQ, GR, GT, GW, HN, HR, HU, ID, IE, IL, IN, IS, IT, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LV, LY, MA, MC, MD, ME, MG, MK, ML, MN, MR, MT, MW, MX, MY, MZ, NA, NE, NG, NI, NL, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SC, SD, SE, SG, SI, SK, SL, SM, SN, ST, SV, SY, SZ, TD, TG, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, UZ, VC, VN, ZA, ZM, ZW only).
TOYOTA JIDOSHA KABUSHIKI KAISHA [JP/JP]; 1, Toyota-cho, Toyota-shi, Aichi 4718571 (JP) (AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BE, BF, BG, BH, BJ, BN, BR, BW, BY, BZ, CA, CF, CG, CH, CI, CL, CM, CN, CO, CR, CU, CY, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, FR, GA, GB, GD, GE, GH, GM, GN, GQ, GR, GT, GW, HN, HR, HU, ID, IE, IL, IN, IS, IT, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LV, LY, MA, MC, MD, ME, MG, MK, ML, MN, MR, MT, MW, MX, MY, MZ, NA, NE, NG, NI, NL, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SC, SD, SE, SG, SI, SK, SL, SM, SN, ST, SV, SY, SZ, TD, TG, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, UZ, VC, VN, ZA, ZM, ZW only).
MAKIHATA, Mitsutoshi [JP/JP]; (JP) (US only).
ESASHI, Masayoshi [JP/JP]; (JP) (US only).
TANAKA, Shuji [JP/JP]; (JP) (US only).
MUROYAMA, Masanori [JP/JP]; (JP) (US only).
FUNABASHI, Hirofumi [JP/JP]; (JP) (US only).
NONOMURA, Yutaka [JP/JP]; (JP) (US only).
HATA, Yoshiyuki [JP/JP]; (JP) (US only).
YAMADA, Hitoshi [JP/JP]; (JP) (US only).
NAKAYAMA, Takahiro [JP/JP]; (JP) (US only).
YAMAGUCHI, Ui [JP/JP]; (JP) (US only)
Inventors: MAKIHATA, Mitsutoshi; (JP).
ESASHI, Masayoshi; (JP).
TANAKA, Shuji; (JP).
MUROYAMA, Masanori; (JP).
FUNABASHI, Hirofumi; (JP).
NONOMURA, Yutaka; (JP).
HATA, Yoshiyuki; (JP).
YAMADA, Hitoshi; (JP).
NAKAYAMA, Takahiro; (JP).
YAMAGUCHI, Ui; (JP)
Agent: IEIRI, Takeshi; HIBIKI IP Law Firm, Asahi Bldg. 10th Floor, 3-33-8, Tsuruya-cho, Kanagawa-ku, Yokohama-shi, Kanagawa 2210835 (JP)
Priority Data:
2012-079811 30.03.2012 JP
Title (EN) INTEGRATED DEVICE
(FR) DISPOSITIF INTÉGRÉ
(JA) 集積化デバイス
Abstract: front page image
(EN)Provided is an integrated device with superior insulation resistance. A channel (150) constituted with an inclined surface on a side surface (152) is provided between adjacent devices. When the front surface is a side on which an electronic circuit or a MEMS device is provided, the channel (150) narrows from the front surface toward the back surface because of the inclined surface. By interposing a molded material (insulating material) (160) in the channel (150), a plurality of devices can be mechanically joined in a state of electrical insulation from each other. In the forming of wiring material (171) that electrically connects adjacent devices to each other, forming is carried out along the side surfaces and bottom surface of the channel (150). When extracting wiring from the back surface, a hole is formed in the bottom surface (151) of the channel (150), and the wiring material (171) is exposed on the back surface by the hole.
(FR)La présente invention se rapporte à un dispositif intégré qui présente une meilleure résistance d'isolement. Un canal (150) constitué avec une surface inclinée sur une surface latérale (152), est agencé entre des dispositifs adjacents. Lorsque la surface avant constitue un côté sur lequel est agencé un circuit électronique ou un dispositif de système microélectromécanique (MEMS pour Micro-ElectroMechanical System), le canal (150) se rétrécit en allant de la surface avant vers la surface arrière en raison de la surface inclinée. En intercalant un matériau moulé (un matériau isolant) (160) dans le canal (150), une pluralité de dispositifs peuvent être unis mécaniquement dans un état permettant un isolement électrique des dispositifs les uns par rapport aux autres. Lors du façonnage d'un matériau de câblage (171) qui raccorde électriquement les dispositifs adjacents les uns aux autres, le façonnage est effectué le long des surfaces latérales et de la surface inférieure du canal (150). Lors de l'extraction du câblage de la surface arrière, un trou est formé dans la surface inférieure (151) du canal (150) et le matériau de câblage (171) est exposé sur la surface arrière par le trou.
(JA) 絶縁耐性に優れた集積化デバイスを提供する。隣接するデバイス同士の間には、側面(152)が傾斜面で構成された溝(150)が設けられている。電子回路またはMEMSデバイスが設けられる側を表面としたときに、溝(150)は傾斜面により表面から裏面に向けて幅狭になっている。溝(150)にモールド材(絶縁材料)(160)が介在することにより、複数のデバイスが互いに電気的に絶縁された状態で機械的に接合されている。隣接するデバイス同士の電気的導通をとる配線材(171)を形成するにあたっては、溝(150)の側面および底面に沿うように形成する。裏面に配線を取り出すにあたっては、溝(150)の底面(151)に孔を形成して、配線材(171)が孔から裏面に露出するようにする。
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG).
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)