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1. WO2013145420 - RANGE SENSOR AND RANGE IMAGE SENSOR

Publication Number WO/2013/145420
Publication Date 03.10.2013
International Application No. PCT/JP2012/079414
International Filing Date 13.11.2012
IPC
G01S 7/481 2006.01
GPHYSICS
01MEASURING; TESTING
SRADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
7Details of systems according to groups G01S13/, G01S15/, G01S17/127
48of systems according to group G01S17/58
481Constructional features, e.g. arrangements of optical elements
G01S 17/89 2006.01
GPHYSICS
01MEASURING; TESTING
SRADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
17Systems using the reflection or reradiation of electromagnetic waves other than radio waves, e.g. lidar systems
88Lidar systems, specially adapted for specific applications
89for mapping or imaging
H01L 27/146 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
14including semiconductor components sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
144Devices controlled by radiation
146Imager structures
H04N 5/369 2011.01
HELECTRICITY
04ELECTRIC COMMUNICATION TECHNIQUE
NPICTORIAL COMMUNICATION, e.g. TELEVISION
5Details of television systems
30Transforming light or analogous information into electric information
335using solid-state image sensors
369SSIS architecture; Circuitry associated therewith
CPC
G01S 17/10
GPHYSICS
01MEASURING; TESTING
SRADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
17Systems using the reflection or reradiation of electromagnetic waves other than radio waves, e.g. lidar systems
02Systems using the reflection of electromagnetic waves other than radio waves
06Systems determining position data of a target
08for measuring distance only
10using transmission of interrupted, pulse-modulated waves
G01S 17/894
GPHYSICS
01MEASURING; TESTING
SRADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
17Systems using the reflection or reradiation of electromagnetic waves other than radio waves, e.g. lidar systems
88Lidar systems specially adapted for specific applications
89for mapping or imaging
8943D imaging with simultaneous measurement of time-of-flight at a 2D array of receiver pixels, e.g. time-of-flight cameras or flash lidar
G01S 7/4863
GPHYSICS
01MEASURING; TESTING
SRADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
7Details of systems according to groups G01S13/00, G01S15/00, G01S17/00
48of systems according to group G01S17/00
483Details of pulse systems
486Receivers
4861Circuits for detection, sampling, integration or read-out
4863Detector arrays, e.g. charge-transfer gates
H01L 27/14603
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
14including semiconductor components sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
144Devices controlled by radiation
146Imager structures
14601Structural or functional details thereof
14603Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
H01L 27/14609
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
14including semiconductor components sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
144Devices controlled by radiation
146Imager structures
14601Structural or functional details thereof
14609Pixel-elements with integrated switching, control, storage or amplification elements
Applicants
  • 浜松ホトニクス株式会社 HAMAMATSU PHOTONICS K.K. [JP]/[JP]
Inventors
  • 間瀬 光人 MASE Mitsuhito
  • 鈴木 高志 SUZUKI Takashi
  • 平光 純 HIRAMITSU Jun
Agents
  • 長谷川 芳樹 HASEGAWA Yoshiki
Priority Data
2012-07079027.03.2012JP
Publication Language Japanese (JA)
Filing Language Japanese (JA)
Designated States
Title
(EN) RANGE SENSOR AND RANGE IMAGE SENSOR
(FR) CAPTEUR TÉLÉMÉTRIQUE ET CAPTEUR D'IMAGE TÉLÉMÉTRIQUE
(JA) 距離センサ及び距離画像センサ
Abstract
(EN)
A first semiconductor region (FD1) is disposed inside of a charge generating region such that the first semiconductor region is at the center portion of a pixel region (PA1), and is surrounded by the charge generating region, and the first semiconductor region collects signal charges from the charge generating region. A first gate electrode (TX1) is disposed between the first semiconductor region (FD1) and the charge generating region, and makes the signal charges from the charge generating region flow into the first semiconductor region (FD1) corresponding to signals inputted thereto. A fourth semiconductor region (SR) has a part thereof positioned at a corner portion of the pixel region (PA1), and the rest parts thereof positioned outside of the pixel region (PA1), said fourth semiconductor region having a conductivity type different from that of the first semiconductor region (FD1), and impurity concentration higher than that of the surrounding regions. A read-out circuit (RC1) is disposed in the fourth semiconductor region (SR), and reads out signals that correspond to the quantity of the charges accumulated in the first semiconductor region (FD1).
(FR)
Une première région de semi-conducteur (FD1) est disposée dans une région de génération de charge, de façon que la première région de semi-conducteur soit dans la partie centrale d'une région de pixel (PA1), et est entourée par la région de génération de charge, et la première région de semi-conducteur collecte des charges de signaux provenant de la région de génération de charge. Une première électrode grille (TX1) est disposée entre la première région de semi-conducteur (FD1) et la région de génération de charge, et permet aux charges de signaux provenant de la région de génération de charge de passer par la première région de semi-conducteur (FD1), correspondant aux signaux qui y sont entrés. Une quatrième région de semi-conducteur (SR) est partiellement positionnée dans une partie coin de la région de pixel (PA1), le reste de la quatrième région de semi-conducteur étant hors de la région de pixel (PA1), ladite quatrième région de semi-conducteur possédant un type de conductivité différent de celui de la première région de semi-conducteur (FD1) et présentant une concentration en impureté supérieure à celle des régions environnantes. Un circuit de lecture (RC1) est disposé dans la quatrième région de semi-conducteur (SR) et lit les signaux qui correspondent à la quantité des charges accumulées dans la première région de semi-conducteur (FD1).
(JA)
 第一半導体領域FD1は、画素領域PA1の中心部で且つ電荷発生領域に囲まれるように電荷発生領域の内側に配置され、電荷発生領域からの信号電荷を収集する。第一ゲート電極TX1は、第一半導体領域FD1と電荷発生領域との間に配置され、入力された信号に応じて電荷発生領域からの信号電荷を第一半導体領域FD1に流入させる。第四半導体領域SRは、その一部が画素領域PA1の角部に位置すると共に残部が画素領域PA1の外側に位置し、第一半導体領域FD1とは異なる導電型であり且つ周囲よりも不純物濃度が高い。読出回路RC1は、第四半導体領域SRに配置され、第一半導体領域FD1に蓄積された電荷量に対応する信号を読み出す。
Also published as
CH10201400001469
DE1120120064011
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