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1. (WO2013145052) THERMISTOR ELEMENT
Latest bibliographic data on file with the International Bureau   

Pub. No.: WO/2013/145052 International Application No.: PCT/JP2012/007631
Publication Date: 03.10.2013 International Filing Date: 28.11.2012
IPC:
H01C 7/04 (2006.01)
Applicants: KURIBAYASHI, Ryosuke[JP/JP]; JP (US)
SEKINO, Shoji[JP/JP]; JP (US)
NEC CORPORATION[JP/JP]; 7-1, Shiba 5-chome, Minato-ku, Tokyo 1088001, JP (AllExceptUS)
Inventors: KURIBAYASHI, Ryosuke; JP
SEKINO, Shoji; JP
Agent: HAYAMI, Shinji; Gotanda TG Bldg. 9F, 9-2, Nishi-Gotanda 7-chome, Shinagawa-ku, Tokyo 1410031, JP
Priority Data:
2012-07416428.03.2012JP
Title (EN) THERMISTOR ELEMENT
(FR) THERMISTANCE
(JA) サーミスタ素子
Abstract: front page image
(EN) A thermistor element (100) is provided with a conductive layer (110), a barrier layer (120), and two electrodes (130). The barrier layer (120) is in contact with the conductive layer (110). The electrodes (130) are in contact with the conductive layer (110), and are not in contact with the barrier layer (120). The electrodes (130) are spaced apart from each other. The interface between the conductive layer (110) and the barrier layer (120) has an energy barrier. The energy barrier is in the direction in which the potential energy of the barrier layer (120) becomes higher than that of the conductive layer (110).
(FR) Cette invention concerne une thermistance (100), comprenant une couche conductrice (110), une couche barrière (120) et deux électrodes (13). Ladite couche barrière (120) est en contact avec la couche conductrice (110). Les électrodes (130) sont en contact avec la couche conductrice (110) et elles ne sont pas en contact avec la couche barrière (120). Les électrodes (130) sont espacées l'une de l'autre. L'interface entre la couche conductrice (110) et la couche barrière (120) présente une barrière d'énergie dans la direction dans laquelle l'énergie potentielle de la couche barrière (120) devient supérieure à celle de la couche conductrice (110).
(JA)  サーミスタ素子(100)は、導電層(110)、障壁層(120)、及び2つの電極(130)を備えている。障壁層(120)は導電層(110)に接している。電極(130)は、導電層(110)に接しており、障壁層(120)には接していない。電極(130)は、互いに離間している。そして導電層(110)と障壁層(120)の界面は、エネルギー障壁を有する。このエネルギー障壁は、障壁層(120)が導電層(110)よりもポテンシャルエネルギーが高くなる方向である。
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)