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1. (WO2013145023) FIELD EFFECT SILICON CARBIDE TRANSISTOR

Pub. No.:    WO/2013/145023    International Application No.:    PCT/JP2012/002224
Publication Date: Fri Oct 04 01:59:59 CEST 2013 International Filing Date: Sat Mar 31 01:59:59 CEST 2012
IPC: H01L 29/78
Applicants: HITACHI, LTD.
株式会社日立製作所
MINE, Toshiyuki
峰 利之
SHIMAMOTO, Yasuhiro
嶋本 泰洋
HAMAMURA, Hirotaka
濱村 浩孝
Inventors: MINE, Toshiyuki
峰 利之
SHIMAMOTO, Yasuhiro
嶋本 泰洋
HAMAMURA, Hirotaka
濱村 浩孝
Title: FIELD EFFECT SILICON CARBIDE TRANSISTOR
Abstract:
In a SiC-MOSFET power device of the present invention, said power device using a SiC substrate, in order to suppress fluctuation of a gate threshold voltage, a laminated insulating film having charge trap characteristics is employed as the gate insulating film of the SiC-Di MOSFET, and charges are injected into the laminated insulating film.