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Machine translation
1. (WO2013145023) FIELD EFFECT SILICON CARBIDE TRANSISTOR
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2013/145023    International Application No.:    PCT/JP2012/002224
Publication Date: 03.10.2013 International Filing Date: 30.03.2012
IPC:
H01L 29/78 (2006.01)
Applicants: HITACHI, LTD. [JP/JP]; 6-6, Marunouchi 1-chome, Chiyoda-ku, Tokyo 1008280 (JP) (For All Designated States Except US).
MINE, Toshiyuki [JP/JP]; (JP) (For US Only).
SHIMAMOTO, Yasuhiro [JP/JP]; (JP) (For US Only).
HAMAMURA, Hirotaka [JP/JP]; (JP) (For US Only)
Inventors: MINE, Toshiyuki; (JP).
SHIMAMOTO, Yasuhiro; (JP).
HAMAMURA, Hirotaka; (JP)
Agent: INOUE, Manabu; c/o HITACHI, LTD., 6-1, Marunouchi 1-chome, Chiyoda-ku, Tokyo 1008220 (JP)
Priority Data:
Title (EN) FIELD EFFECT SILICON CARBIDE TRANSISTOR
(FR) TRANSISTOR À EFFET DE CHAMP EN CARBURE DE SILICIUM
(JA) 電界効果型炭化珪素トランジスタ
Abstract: front page image
(EN)In a SiC-MOSFET power device of the present invention, said power device using a SiC substrate, in order to suppress fluctuation of a gate threshold voltage, a laminated insulating film having charge trap characteristics is employed as the gate insulating film of the SiC-Di MOSFET, and charges are injected into the laminated insulating film.
(FR)Dans un dispositif de puissance SiC-MOSFET de la présente invention, ledit dispositif de puissance utilisant un substrat en carbure de silicium (SiC) afin de supprimer la fluctuation d'une tension de seuil de grille, un film isolant stratifié ayant des caractéristiques de piégeage de charge est employé en tant que film d'isolation de grille du SiC-Di-MOSFET, et des charges sont injectées dans le film isolant stratifié.
(JA) SiC基板を用いたSiC-MOSFETパワーデバイスにおいて、ゲート閾値電圧の変動を抑制するために、SiC-DiMOSFETのゲート絶縁膜に電荷捕獲特性を有する積層絶縁膜を採用し、上記積層絶縁膜中に電荷注入を行うことで達成される。
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG).
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)