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1. (WO2013145011) SEMICONDUCTOR PHOTOMULTIPLIER ELEMENT

Pub. No.:    WO/2013/145011    International Application No.:    PCT/JP2012/002199
Publication Date: Fri Oct 04 01:59:59 CEST 2013 International Filing Date: Fri Mar 30 01:59:59 CEST 2012
IPC: H04N 5/369
H01L 31/10
H04N 5/32
Applicants: SHIMADZU CORPORATION
株式会社島津製作所
FURUMIYA, Tetsuo
古宮 哲夫
Inventors: FURUMIYA, Tetsuo
古宮 哲夫
Title: SEMICONDUCTOR PHOTOMULTIPLIER ELEMENT
Abstract:
The purpose of the present invention is to provide a semiconductor photomultiplier element with improved detection precision and temporal resolution, and the present invention comprises analog-to-digital (AD) conversion circuits (11) connected to diodes (D). Part of the current generated when a diode (D) detects a photon flows into a neighboring diode (D) that is coupled in parallel to the first diode (D) via a resistor. The current at this time is charged and discharged by the parasitic capacitance of the neighboring diode (D). However, the discharged current is obstructed by the AD conversion circuit (11) and does not flow to the output terminal side, so the AD conversion circuit (11) cannot be switched ON or OFF. Therefore, light can be detected without influence from the current discharged from the parasitic capacitance. Consequently, the present invention makes it possible to provide a semiconductor photomultiplier element with high detection precision and favorable temporal resolution.