Some content of this application is unavailable at the moment.
If this situation persist, please contact us atFeedback&Contact
1. (WO2013143324) LUMINOUS CRYSTAL CONTAINING BISMUTH AND WITH ULTRA WIDE BAND OF 1-3 MICROMETERS AND PREPARATION METHOD THEREOF
Latest bibliographic data on file with the International Bureau   

Pub. No.: WO/2013/143324 International Application No.: PCT/CN2012/086451
Publication Date: 03.10.2013 International Filing Date: 12.12.2012
IPC:
C30B 29/12 (2006.01)
C CHEMISTRY; METALLURGY
30
CRYSTAL GROWTH
B
SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
29
Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
10
Inorganic compounds or compositions
12
Halides
Applicants:
华南理工大学 SOUTH CHINA UNIVERSITY OF TECHNOLOGY [CN/CN]; 中国广东省广州市 天河区五山路381号 No.381 Wushan Road, Tianhe District Guangzhou, Guangdong 510640, CN
Inventors:
彭明营 PENG, Mingying; CN
曹人平 CAO, Renping; CN
邱建荣 QIU, Jianrong; CN
Agent:
广州市华学知识产权代理有限公司 GUANGZHOU HUAXUE INTELLECTUAL PROPERTY AGENCY CO., LTD; 中国广东省广州市 天河区五山路381号华南理工大学教学二区8号物资大楼首层 1st Floor, No.8 Material Building 2nd Teaching Area, South China University of Technology, No.381 Wushan Road, Tianhe District Guangzhou, Guangdong 510640, CN
Priority Data:
201210088940.129.03.2012CN
Title (EN) LUMINOUS CRYSTAL CONTAINING BISMUTH AND WITH ULTRA WIDE BAND OF 1-3 MICROMETERS AND PREPARATION METHOD THEREOF
(FR) CRISTAUX LUMINEUX CONTENANT DU BISMUTH ET BANDE ULTRA LARGE DE MICROMÈTRES 1 -3 ET PROCÉDÉ ET PRÉPARATION DE CELUI-CI
(ZH) 一种具有1-3微米超宽带发光的含铋晶体及其制备方法
Abstract:
(EN) Disclosed is a luminous crystal containing bismuth and with an ultra wide band of 1-3 micrometers, which is a halide crystal containing Bi53+ cluster ions. The crystal containing bismuth is Bi5(GaCl4)3, Bi5(AlCl4)3 and Bi5(AsF6)3S2O4. Further disclosed is a method for preparing halide crystal containing Bi53+ cluster ions by adopting a melt method under anhydrous and anaerobic conditions. Compared with the prior art, the luminous crystal containing bismuth and with the ultra wide band of 1-3 micrometers prepared in the present invention has an absorbing function covering a region of 300-1100 nm and ultra wide band fluorescence of 1000-3000 nm. The fluorescence life is in microsecond level and only one type of Bi53+ luminescence center is used as a gain medium. The present invention is applied to the fields such as novel ultra wide band wavelength-adjustable laser sources or ultra short pulse lasers.
(FR) La présente invention se rapporte à des cristaux lumineux contenant du bismuth et avec une bande ultra large de 1 à 3 micromètres, qui est un cristal d'halogénure contenant des ions en grappe Bi53 +. Le cristal contenant du bismuth est Bi5 (GaCl4) 3, Bi5 (AlCl4) 3 et Bi5 (AsF6) 3S2O4. l'invention concerne en Outre un procédé de préparation de cristaux d'halogénure contenant des ions en grappe Bi53 + en adoptant un procédé de fusion sous des conditions d'aérobie et d'anhydre. Par Rapport à l'art antérieur, les cristaux lumineux contenant du bismuth et avec la bande ultra large de 1 à 3 micromètres préparés dans la présente invention a une fonction d'absorption recouvrant une région de 300 et 1100 nm et la fluorescence ultra large bande de 1000 à 3000 nm. La durée de vie de la fluorescence est en microsecondes et seulement un type de centre de luminescence Bi53 + est utilisé en tant que milieu de gain. La présente invention est appliquée à des domaines tels que la nouvelle longueur d'onde à bande ultra - large de sources laser réglable ou lasers à impulsions ultra-courtes.
(ZH) 本发明公开了一种具有1-3微米超宽带发光的含铋晶体,含有Bi53+团簇离子的卤化物晶体,所述含铋晶体为Bi5(GaCl4)3、Bi5(AlCl4)3、Bi5(AsF6)3S2O4。本发明还公开了在无水无氧条件下采用熔体法制备上述含有Bi53+团簇离子的卤化物晶体的方法。与现有技术相比,本发明制备的具有1-3微米超宽带发光的含铋晶体具有覆盖300-1100nm区间的吸收,具有1000-3000nm的超宽带荧光,荧光寿命在微秒量级,只有一种类型的Bi53+发光中心,作为增益介质,应用在超宽带波长可调谐新型激光光源或超短脉冲激光等领域。
front page image
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG)
Publication Language: Chinese (ZH)
Filing Language: Chinese (ZH)