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1. WO2013143312 - ARRAY SUBSTRATE AND MANUFACTURING METHOD THEREOF

Publication Number WO/2013/143312
Publication Date 03.10.2013
International Application No. PCT/CN2012/085484
International Filing Date 28.11.2012
IPC
G02F 1/1362 2006.01
GPHYSICS
02OPTICS
FDEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH IS MODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THE DEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY, COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g. SWITCHING, GATING, MODULATING OR DEMODULATING; TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF; FREQUENCY-CHANGING; NON-LINEAR OPTICS; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
1Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
01for the control of the intensity, phase, polarisation or colour
13based on liquid crystals, e.g. single liquid crystal display cells
133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
136Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
1362Active matrix addressed cells
H01L 21/77 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
70Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in or on a common substrate or of specific parts thereof; Manufacture of integrated circuit devices or of specific parts thereof
77Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
H01L 27/12 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
12the substrate being other than a semiconductor body, e.g. an insulating body
CPC
G02F 1/1368
GPHYSICS
02OPTICS
FDEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH IS MODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THE DEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY, COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g. SWITCHING, GATING, MODULATING OR DEMODULATING; TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF; FREQUENCY-CHANGING; NON-LINEAR OPTICS; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
1Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
01for the control of the intensity, phase, polarisation or colour 
13based on liquid crystals, e.g. single liquid crystal display cells
133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
136Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
1362Active matrix addressed cells
1368in which the switching element is a three-electrode device
H01L 27/1255
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
12the substrate being other than a semiconductor body, e.g. an insulating body
1214comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
1255integrated with passive devices, e.g. auxiliary capacitors
Applicants
  • 北京京东方光电科技有限公司 BEIJING BOE OPTOELECTRONICS TECHNOLOGY CO., LTD. [CN]/[CN]
Inventors
  • 何宗泽 HE, Zongze
Agents
  • 北京市柳沈律师事务所 LIU, SHEN & ASSOCIATES
Priority Data
201210093643.631.03.2012CN
Publication Language Chinese (ZH)
Filing Language Chinese (ZH)
Designated States
Title
(EN) ARRAY SUBSTRATE AND MANUFACTURING METHOD THEREOF
(FR) SUBSTRAT DE RÉSEAU ET SON PROCÉDÉ DE FABRICATION
(ZH) 阵列基板及制造方法
Abstract
(EN)
An array substrate and a manufacturing method thereof. The array substrate includes a substrate (21), a gate insulation layer (23) and a passivation layer (25) which are positioned on the substrate (21), and a resistor (24) positioned between the gate insulation layer (23) and the passivation layer (25), wherein at least one through hole (26) formed on the area of the passivation layer (25) covering the resistor (24), so that the resistor (24) is integrated in the array substrate to save the more area for a PCB, and the power consumption of the array substrate is reduced.
(FR)
Un substrat de réseau et un procédé de fabrication de celui-ci. Le substrat de réseau comprend un substrat (21), une couche d'isolation de grille (23) et une couche de passivation (25) qui sont positionnées sur le substrat (21), et une résistance (24) positionnée entre la couche d'isolation de grille (23) et la couche de passivation (25), dans lequel au moins un trou traversant (26) formée sur la zone de la couche de passivation (25) recouvrant la résistance (24), de sorte que la résistance (24) est intégrée dans le substrat de réseau pour sauvegarder plus pour une zone de carte de circuits imprimés, et la consommation d'énergie du substrat de réseau est réduite.
(ZH)
一种阵列基板及制作该基板的方法,该阵列基板包括:基板(21);位于所述基板(21)上的栅极绝缘层(23)和钝化层(25);以及位于所述栅极绝缘层(23)和所述钝化层(25)之间的电阻(24),其中在所述钝化层(25)覆盖所述电阻(24)的区域上有至少一个通孔(26),从而将电阻(24)集成在阵列基板中,为PCB板节约出了更多空间,并且降低了功耗。
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Latest bibliographic data on file with the International Bureau