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1. WO2013143295 - ARRAY SUBSTRATE OF X-RAY DETECTION DEVICE AND MANUFACTURING METHOD THEREOF

Publication Number WO/2013/143295
Publication Date 03.10.2013
International Application No. PCT/CN2012/084607
International Filing Date 14.11.2012
IPC
H01L 27/146 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
14including semiconductor components sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
144Devices controlled by radiation
146Imager structures
G01T 1/24 2006.01
GPHYSICS
01MEASURING; TESTING
TMEASUREMENT OF NUCLEAR OR X-RADIATION
1Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
16Measuring radiation intensity
24with semiconductor detectors
H01L 29/786 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66Types of semiconductor device
68controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified, or switched
76Unipolar devices
772Field-effect transistors
78with field effect produced by an insulated gate
786Thin-film transistors
CPC
H01L 27/1288
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
12the substrate being other than a semiconductor body, e.g. an insulating body
1214comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
1259Multistep manufacturing methods
1288employing particular masking sequences or specially adapted masks, e.g. half-tone mask
H01L 27/14632
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
14including semiconductor components sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
144Devices controlled by radiation
146Imager structures
14601Structural or functional details thereof
14632Wafer-level processed structures
H01L 27/14658
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
14including semiconductor components sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
144Devices controlled by radiation
146Imager structures
14643Photodiode arrays; MOS imagers
14658X-ray, gamma-ray or corpuscular radiation imagers
Applicants
  • 北京京东方光电科技有限公司 BEIJING BOE OPTOELECTRONICS TECHNOLOGY CO., LTD. [CN]/[CN]
Inventors
  • 谢振宇 XIE, Zhenyu
  • 徐少颖 XU, Shaoying
  • 陈旭 CHEN, Xu
Agents
  • 北京市柳沈律师事务所 LIU, SHEN & ASSOCIATES
Priority Data
201210084693.827.03.2012CN
Publication Language Chinese (ZH)
Filing Language Chinese (ZH)
Designated States
Title
(EN) ARRAY SUBSTRATE OF X-RAY DETECTION DEVICE AND MANUFACTURING METHOD THEREOF
(FR) SUBSTRAT EN RÉSEAU DE DISPOSITIF DE DÉTECTION DE RAYONS X ET PROCÉDÉ DE FABRICATION DE CELUI-CI
(ZH) X射线检测装置的阵列基板及其制造方法
Abstract
(EN)
An array substrate of an X-ray detection device and a manufacturing method thereof. The array substrate comprises a thin film transistor device and a photoelectric diode sensor connected with the thin film transistor device. The thin film transistor device comprises: a source electrode (55) and a drain electrode (56) formed on a base plate substrate (50); an ohm layer (69) formed above the source electrode (55) and the drain electrode (56); an active layer (53) formed above the ohm layer (69) and forming a channel with the source electrode (55) and the drain electrode (56); a gate electrode insulating layer (52) formed above the active layer (53) and covering the whole substrate (50); and a gate electrode (51) formed above the gate electrode insulating layer (52) and positioned above the active layer (53). The method simplifies the manufacturing process of the array substrate, improves the productivity, and reduces the production cost.
(FR)
La présente invention porte sur un substrat en réseau d'un dispositif de détection de rayons X et un procédé de fabrication de celui-ci. Le substrat en réseau comprend un dispositif de transistor en couches minces et un capteur de diode photoélectrique relié au dispositif de transistor en couches minces. Le dispositif de transistor en couches minces comprend : une électrode de source (55) et une électrode de drain (56) formées sur un substrat de plaque de base (50) ; une couche ohmique (69) formée au-dessus de l'électrode de source (55) et de l'électrode de drain (56) ; une couche active (53) formée au-dessus de la couche ohmique (69) et formant un canal avec l'électrode de source (55) et l'électrode de drain (56) ; une couche isolante d'électrode de grille (52) formée au-dessus de la couche active (53) et couvrant tout le substrat (50) ; et une électrode de grille (51) formée au-dessus de la couche isolante d'électrode de grille (52) et positionnée au-dessus de la couche active (53). Le procédé simplifie le processus de fabrication du substrat en réseau, améliore la productivité et réduit le coût de production.
(ZH)
一种X射线检测装置的阵列基板及其制造方法,包括薄膜晶体管器件和与薄膜晶体管器件相连的光电二极管传感器件。薄膜晶体管器件包括:形成于衬底基板(50)之上的源极(55)和漏极(56);形成于源极(55)和漏极(56)之上的欧姆层(69);形成于欧姆层(69)之上并与源极(55)和漏极(56)形成沟道的有源层(53);形成于有源层(53)之上并覆盖整个基板(50)的栅极绝缘层(52);形成于栅极绝缘层(52)之上,并位于有源层(53)上方的栅极(51)。该方法简化了阵列基板的制造工艺,提高了产能,降低了生产成本。
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