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1. (WO2013143294) ARRAY SUBSTRATE AND MANUFACTURING METHOD THEREOF, AND DISPLAY DEVICE
Latest bibliographic data on file with the International Bureau   

Pub. No.: WO/2013/143294 International Application No.: PCT/CN2012/084537
Publication Date: 03.10.2013 International Filing Date: 13.11.2012
IPC:
H01L 27/12 (2006.01) ,H01L 21/77 (2006.01) ,G02F 1/1362 (2006.01) ,G02F 1/1368 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27
Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02
including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
12
the substrate being other than a semiconductor body, e.g. an insulating body
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
70
Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in or on a common substrate or of specific parts thereof; Manufacture of integrated circuit devices or of specific parts thereof
77
Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
G PHYSICS
02
OPTICS
F
DEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH IS MODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THE DEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY, COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g. SWITCHING, GATING, MODULATING OR DEMODULATING; TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF; FREQUENCY-CHANGING; NON-LINEAR OPTICS; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
1
Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
01
for the control of the intensity, phase, polarisation or colour
13
based on liquid crystals, e.g. single liquid crystal display cells
133
Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
136
Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
1362
Active matrix addressed cells
G PHYSICS
02
OPTICS
F
DEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH IS MODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THE DEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY, COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g. SWITCHING, GATING, MODULATING OR DEMODULATING; TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF; FREQUENCY-CHANGING; NON-LINEAR OPTICS; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
1
Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
01
for the control of the intensity, phase, polarisation or colour
13
based on liquid crystals, e.g. single liquid crystal display cells
133
Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
136
Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
1362
Active matrix addressed cells
1368
in which the switching element is a three-electrode device
Applicants: BOE TECHNOLOGY GROUP CO., LTD.[CN/CN]; No.10 Jiuxianqiao Rd., Chaoyang District Beijing 100015, CN
Inventors: TONG, Xiaoyang; CN
CAO, Zhanfeng; CN
Agent: LIU, SHEN & ASSOCIATES; A0601, Huibin Building, No.8 Beichen Dong Street Chaoyang District Beijing 100101, CN
Priority Data:
201210088834.329.03.2012CN
Title (EN) ARRAY SUBSTRATE AND MANUFACTURING METHOD THEREOF, AND DISPLAY DEVICE
(FR) SUBSTRAT DE RÉSEAU ET PROCÉDÉ DE FABRICATION DE CELUI-CI ET DISPOSITIF D'AFFICHAGE
(ZH) 阵列基板、其制作方法以及显示装置
Abstract:
(EN) Provided are a display device, an array substrate and a manufacturing method thereof. The array substrate comprises a substrate (1); a plurality of gate lines and a plurality of data lines, intersected with each other and formed on the substrate (1); and a plurality of pixel units. The pixel unit comprises a thin-film transistor and a pixel electrode (3). The thin-film transistor comprises a source (8), a drain (2), an active layer (4), a gate insulating layer (5) and a gate (6). The source (8) and the drain (2) are oppositely arranged on the substrate (1) and form a channel of the thin-film transistor; the active layer (4) is located above the source (8), the drain (2) and the channel; the gate insulating layer (5) and the gate (6) are arranged above the active layer (4) in sequence; and the pixel electrode (3) is located in an area outside the thin-film transistor in the pixel unit and extends to the upper part of the drain (8) and is overlapped with the drain (8).
(FR) L'invention concerne un dispositif d'affichage, un substrat de réseau et un procédé de fabrication de ceux-ci. Le substrat de réseau comprend un substrat (1) ; une pluralité de lignes de grille et une pluralité de lignes de données, alors mis en intersection avec chaque autre et formées sur le substrat (1) ; et une pluralité d'unités de pixel. L'unité de pixel comprend un transistor à film mince et une électrode de pixel (3). Le transistor à film mince comprend une source (8), un drain (2), une couche active (4), une couche d'isolation de grille (5) et une grille (6) La source (8) et le drain (2) sont agencés de façon opposée sur le substrat (1) et former un canal du transistor à film mince ; la couche active (4) est située au-dessus de la source (8), le drain (2) et le canal ; la couche d'isolation de grille (5) et la grille (6) sont disposés au-dessus de la couche active (4) en séquence ; ; et l'électrode de pixel (3) est située dans une zone à l'extérieur du transistor à film mince dans l' unité de pixels et s' étend vers la partie supérieure du drain (8) et est chevauchée par le drain (8).
(ZH) 提供一种显示装置、阵列基板及其制作方法。阵列基板包括基板(1);多条栅线和多条数据线,彼此交叉且形成在基板(1)上;多个像素单元,像素单元包括薄膜晶体管和像素电极(3),薄膜晶体管包括源电极(8)、漏电极(2)、有源层(4)、栅极绝缘层(5)和栅电极(6),源电极(8)和漏电极(2)在基板(1)上相对设置并形成薄膜晶体管的沟道;有源层(4)位于源电极(8)、漏电极(2)以及沟道的上方;栅极绝缘层(5)和栅电极(6)依次设置在有源层(4)的上方;像素电极(3)位于像素单元中薄膜晶体管之外的区域并延伸至漏电极(8)的上方与漏电极(8)搭接。
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG)
Publication Language: Chinese (ZH)
Filing Language: Chinese (ZH)