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1. (WO2013143241) CHEMICAL VAPOUR DEPOSITION METHOD FOR ORGANIC METAL COMPOUND AND APPARATUS THEREFOR
Latest bibliographic data on file with the International Bureau   

Pub. No.: WO/2013/143241 International Application No.: PCT/CN2012/078581
Publication Date: 03.10.2013 International Filing Date: 12.07.2012
IPC:
C23C 16/18 (2006.01) ,C23C 16/44 (2006.01) ,C23C 16/455 (2006.01) ,C23C 16/458 (2006.01)
C CHEMISTRY; METALLURGY
23
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
C
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16
Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (CVD) processes
06
characterised by the deposition of metallic material
18
from metallo-organic compounds
C CHEMISTRY; METALLURGY
23
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
C
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16
Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (CVD) processes
44
characterised by the method of coating
C CHEMISTRY; METALLURGY
23
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
C
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16
Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (CVD) processes
44
characterised by the method of coating
455
characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
C CHEMISTRY; METALLURGY
23
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
C
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16
Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (CVD) processes
44
characterised by the method of coating
458
characterised by the method used for supporting substrates in the reaction chamber
Applicants:
马悦 MA, Yue [US/CN]; CN (UsOnly)
黄占超 HUANG, Zhanchao [CN/CN]; CN (UsOnly)
何川 HE, Chuan [CN/CN]; CN (UsOnly)
王俊 WANG, Jun [CN/CN]; CN (UsOnly)
宋涛 SONG, Tao [CN/CN]; CN (UsOnly)
林芳 LIN, Fang [CN/CN]; CN (UsOnly)
任爱玲 REN, Ailing [CN/CN]; CN (UsOnly)
丁兴燮 Cheong, Hungseob [US/CN]; CN (UsOnly)
萨尔瓦多 Umotoy, Sal [US/CN]; CN (UsOnly)
奚明 XI, Ming [US/CN]; CN (UsOnly)
理想能源设备(上海)有限公司 IDEAL ENERGY EQUIPMENT (SHANGHAI) LTD. [CN/CN]; 中国上海市 浦东张江高科园区居里路1号 1 Juli Rd., Zhangjiang High-Tech Park, Pudong Shanghai 201203, CN (AllExceptUS)
Inventors:
马悦 MA, Yue; CN
黄占超 HUANG, Zhanchao; CN
何川 HE, Chuan; CN
王俊 WANG, Jun; CN
宋涛 SONG, Tao; CN
林芳 LIN, Fang; CN
任爱玲 REN, Ailing; CN
丁兴燮 Cheong, Hungseob; CN
萨尔瓦多 Umotoy, Sal; CN
奚明 XI, Ming; CN
Agent:
北京润泽恒知识产权代理有限公司 BEIJING RISEHIGH INTELLECTUAL PROPERTY LAW FIRM; 中国北京市 海淀区中关村南大街31号神舟大厦1116 1116, Shenzhou Building No.31 South Street, Zhongguancun Hai Dian District Beijing 100081, CN
Priority Data:
201210090988.630.03.2012CN
Title (EN) CHEMICAL VAPOUR DEPOSITION METHOD FOR ORGANIC METAL COMPOUND AND APPARATUS THEREFOR
(FR) PROCÉDÉ DE DÉPÔT CHIMIQUE EN PHASE VAPEUR POUR UN COMPOSÉ MÉTALLIQUE ORGANIQUE ET APPAREIL ASSOCIÉ
(ZH) 金属有机化合物化学气相沉积方法及其装置
Abstract:
(EN) Disclosed are a chemical vapour deposition method for an organic metal compound and an apparatus therefor. The method comprises: providing a base and at least one substrate; providing a first gas inlet device and a second gas inlet device, the spraying direction of a first gas along a first gas outlet forming an included angle with the spraying direction of a second gas along a second gas outlet; depositing the first gas and the second gas on the surface of the substrate to obtain a layer of organic metal compound; the first gas being distributed in the reaction region in a concentration gradient, comprising an A region and a B region, with the average gas concentration in the A region being higher than that in the B region; the second gas being distributed in the reaction region in a concentration gradient, comprising a C region and a D region, with the average gas concentration in the C region being higher than that in the D region; the A regions and the C regions being arranged alternately; and the substrate passing through the A region and the C region in sequence. The present invention can not only avoid the premature reaction of the reactive gases, but also improve the reaction rate and reduce production costs.
(FR) L'invention concerne un procédé de dépôt chimique en phase vapeur pour un composé métallique organique et un appareil associé. Le procédé consiste : à fournir une base et au moins un substrat ; à fournir un premier dispositif d'admission de gaz et un second dispositif d'admission de gaz, la direction de pulvérisation d'un premier gaz le long d'un premier refoulement de gaz formant un angle inclus avec la direction de pulvérisation d'un second gaz le long d'un second refoulement de gaz ; à déposer le premier gaz et le second gaz sur la surface du substrat afin d'obtenir une couche de composé métallique organique ; le premier gaz étant distribué dans la région de réaction en un gradient de concentration, comprenant une région A et une région B, la concentration moyenne en gaz dans la région A étant supérieure à celle de la région B ; le second gaz étant distribué dans la région de réaction en un gradient de concentration, comprenant une région C et une région D, la concentration moyenne en gaz dans la région C étant supérieure à celle de la région D ; les régions A et les régions C étant agencées en alternance ; et le substrat passant par la région A et la région C dans l'ordre. La présente invention peut non seulement éviter la réaction prématurée des gaz réactifs, mais aussi améliorer la vitesse de réaction et réduire les coûts de production.
(ZH) 一种金属有机化合物化学气相沉积方法及其装置。所述方法包括:提供基座及至少一基片;提供第一进气装置和第二进气装置,第一气体沿着第一出气口喷出的方向与第二气体沿着第二出气口喷出的方向成一夹角;第一气体与第二气体在基片上表面沉积得到一层金属有机化合物;第一气体在反应区域内浓度梯度分布,包括A区域和B区域,A区域的气体平均浓度高于B区域的气体平均浓度;第二气体在反应区域内的浓度梯度分布,包括C区域和D区域,C区域的气体平均浓度高于D区域的气体平均浓度;A区域与C区域间隔排列;基片依次通过A区域与C区域。本发明既可以避免反应气体提前反应,也可以提高反应速率,降低生产成本。
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG)
Publication Language: Chinese (ZH)
Filing Language: Chinese (ZH)