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1. (WO2013143034) SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

Pub. No.:    WO/2013/143034    International Application No.:    PCT/CN2012/000466
Publication Date: Fri Oct 04 01:59:59 CEST 2013 International Filing Date: Tue Apr 10 01:59:59 CEST 2012
IPC: H01L 21/762
Applicants: INSTITUTE OF MICROELECTRONICS, CHINESE ACADEMY OF SCIENCES
中国科学院微电子研究所
YIN, Haizhou
尹海洲
JIANG, Wei
蒋葳
Inventors: YIN, Haizhou
尹海洲
JIANG, Wei
蒋葳
Title: SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
Abstract:
Provided is a manufacturing method of a semiconductor device, comprising the following steps: forming a shallow trench in a substrate (1); forming a shallow trench filling layer (4) in the shallow trench; forming a gasket cover layer (5) on the shallow trench filling layer; and implanting ion in the shallow trench filling layer and performing annealing, to form a shallow trench isolation (6). Through the method, an insulation material is formed by filling a material and implanting ion in the shallow trench, and the compressive stress is exerted to the active region of a substrate due to volume expansion of the filled material, thereby improving the carrier mobility of a future channel region, and improving the device performance.