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1. WO2013140065 - SYSTEM FOR MEASURING A ZONE OF SEPARATION IN A SUBSTRATE

Publication Number WO/2013/140065
Publication Date 26.09.2013
International Application No. PCT/FR2013/050517
International Filing Date 12.03.2013
IPC
G01N 3/06 2006.01
GPHYSICS
01MEASURING; TESTING
NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
3Investigating strength properties of solid materials by application of mechanical stress
02Details
06Special adaptations of indicating or recording means
G01B 11/14 2006.01
GPHYSICS
01MEASURING; TESTING
BMEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
11Measuring arrangements characterised by the use of optical means
14for measuring distance or clearance between spaced objects or spaced apertures
CPC
G01B 11/14
GPHYSICS
01MEASURING; TESTING
BMEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
11Measuring arrangements characterised by the use of optical means
14for measuring distance or clearance between spaced objects or spaced apertures
G01N 21/9501
GPHYSICS
01MEASURING; TESTING
NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
21Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
84Systems specially adapted for particular applications
88Investigating the presence of flaws or contamination
95characterised by the material or shape of the object to be examined
9501Semiconductor wafers
G01N 21/9505
GPHYSICS
01MEASURING; TESTING
NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
21Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
84Systems specially adapted for particular applications
88Investigating the presence of flaws or contamination
95characterised by the material or shape of the object to be examined
9501Semiconductor wafers
9505Wafer internal defects, e.g. microcracks
G01P 3/36
GPHYSICS
01MEASURING; TESTING
PMEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
3Measuring linear or angular speed; Measuring differences of linear or angular speeds
36Devices characterised by the use of optical means, e.g. using infra-red, visible, or ultra-violet light
H01L 21/76254
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
71Manufacture of specific parts of devices defined in group H01L21/70
76Making of isolation regions between components
762Dielectric regions ; , e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
7624using semiconductor on insulator [SOI] technology
76251using bonding techniques
76254with separation/delamination along an ion implanted layer, e.g. Smart-cut, Unibond
H01L 22/12
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
22Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
10Measuring as part of the manufacturing process
12for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
Applicants
  • COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES [FR]/[FR]
Inventors
  • MAZEN, Frédéric
  • RIEUTORD, François
  • PENOT, Jean-Daniel
  • MONTMAYEUL, Philippe
Agents
  • CABINET GERMAIN & MAUREAU
Priority Data
125250721.03.2012FR
Publication Language French (FR)
Filing Language French (FR)
Designated States
Title
(EN) SYSTEM FOR MEASURING A ZONE OF SEPARATION IN A SUBSTRATE
(FR) SYSTÈME DE MESURE D'UNE ZONE D'ÉCARTEMENT DANS UN SUBSTRAT
Abstract
(EN)
The invention relates to a system for measuring a zone of separation in a substrate. This system (2) for measuring the propagation of a zone C of separation between a first portion (4) and a second portion (5) of at least one substrate (6) comprises: a module (10) for emitting at least two incident beams Fi each of which illuminates a separate point on the substrate (6), the at least two incident beams Fi being able to pass through the first portion (4) and the zone C of separation and meet the second portion (5) in such a way that each of them generates at least one first emergent beam Fe originating from the interface between the first portion (4) and the zone C of separation, and at least one second emergent beam Fe originating from the interface between the zone C of separation and the second portion (5); a detecting module (8) for detecting light intensity values resulting from interference between the first and second emergent beams Fe; and a computer (11) for determining the conditions of the propagation of the zone C of separation.
(FR)
Ce système de mesure (2) de la propagation d'une zone d'écartement C entre une première portion (4) et une deuxième portion (5) d'au moins un substrat (6) comprend : - un module d'émission (10) d'au moins deux faisceaux incidents Fi illuminant chacun un point distinct du substrat (6), les au moins deux faisceaux incidents Fi pouvant traverser la première portion (4), la zone d'écartement C et rencontrer la deuxième portion (5), de manière à générer chacun au moins un premier faisceau émergent Fe provenant de l'interface entre la première portion (4) et la zone d'écartement C, et au moins un deuxième faisceau émergent Fe provenant de l'interface entre la zone d'écartement C et la deuxième portion (5), - un module de détection (8) pour détecter les valeurs d'intensité lumineuse de l'interférence entre les premier et deuxième faisceaux émergents Fe, - un calculateur (11) pour déterminer les conditions de la propagation de la zone d'écartement C.
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