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1. WO2013139624 - OPTOELECTRONIC SEMICONDUCTOR CHIP AND HEADLAMP HAVING SUCH A SEMICONDUCTOR CHIP

Publication Number WO/2013/139624
Publication Date 26.09.2013
International Application No. PCT/EP2013/054726
International Filing Date 08.03.2013
IPC
H01L 27/15 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
15including semiconductor components with at least one potential-jump barrier or surface barrier, specially adapted for light emission
F21S 8/10 2006.01
FMECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
21LIGHTING
SNON-PORTABLE LIGHTING DEVICES; SYSTEMS THEREOF; VEHICLE LIGHTING DEVICES SPECIALLY ADAPTED FOR VEHICLE EXTERIORS
8Lighting devices intended for fixed installation
10specially adapted for vehicles
H01L 33/50 2010.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
48characterised by the semiconductor body packages
50Wavelength conversion elements
CPC
B60Q 2400/20
BPERFORMING OPERATIONS; TRANSPORTING
60VEHICLES IN GENERAL
QARRANGEMENT OF SIGNALLING OR LIGHTING DEVICES, THE MOUNTING OR SUPPORTING THEREOF OR CIRCUITS THEREFOR, FOR VEHICLES IN GENERAL
2400Special features or arrangements of exterior signal lamps for vehicles
20Multi-color single source or LED matrix, e.g. yellow blinker and red brake lamp generated by single lamp
F21S 41/141
FMECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
21LIGHTING
SNON-PORTABLE LIGHTING DEVICES; SYSTEMS THEREOF; VEHICLE LIGHTING DEVICES SPECIALLY ADAPTED FOR VEHICLE EXTERIORS
41Illuminating devices specially adapted for vehicle exteriors, e.g. headlamps
10characterised by the light source
14characterised by the type of light source
141Light emitting diodes [LED]
F21S 41/24
FMECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
21LIGHTING
SNON-PORTABLE LIGHTING DEVICES; SYSTEMS THEREOF; VEHICLE LIGHTING DEVICES SPECIALLY ADAPTED FOR VEHICLE EXTERIORS
41Illuminating devices specially adapted for vehicle exteriors, e.g. headlamps
20characterised by refractors, transparent cover plates, light guides or filters
24Light guides
F21S 43/14
FMECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
21LIGHTING
SNON-PORTABLE LIGHTING DEVICES; SYSTEMS THEREOF; VEHICLE LIGHTING DEVICES SPECIALLY ADAPTED FOR VEHICLE EXTERIORS
43Signalling devices specially adapted for vehicle exteriors, e.g. brake lamps, direction indicator lights or reversing lights
10characterised by the light source
13characterised by the type of light source
14Light emitting diodes [LED]
H01L 27/15
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
15including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission
H01L 2924/0002
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2924Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
0001Technical content checked by a classifier
0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Applicants
  • OSRAM OPTO SEMICONDUCTORS GMBH [DE]/[DE]
Inventors
  • BRANDL, Michael
  • FREI, Ulrich
Agents
  • EPPING HERMANN FISCHER PATENTANWALTSGESELLSCHAFT MBH
Priority Data
102012102301.819.03.2012DE
Publication Language German (DE)
Filing Language German (DE)
Designated States
Title
(DE) OPTOELEKTRONISCHER HALBLEITERCHIP UND SCHEINWERFER MIT EINEM SOLCHEN HALBLEITERCHIP
(EN) OPTOELECTRONIC SEMICONDUCTOR CHIP AND HEADLAMP HAVING SUCH A SEMICONDUCTOR CHIP
(FR) PUCE DE SEMI-CONDUCTEUR OPTOÉLECTRONIQUE ET PROJECTEUR ÉQUIPÉ D'UNE TELLE PUCE DE SEMI-CONDUCTEUR
Abstract
(DE)
In mindestens einer Ausführungsform umfasst der optoelektronische Halbleiterchip (1) eine Halbleiterschichtenfolge (2) mit einer aktiven Schicht (20) zur Erzeugung einer Primärstrahlung mit einer Hauptwellenlänge kleiner 500 nm. Der Halbleiterchip (1) beinhaltet ein erstes Konversionselement (31) zur Erzeugung einer ersten Sekundärstrahlung und ein zweites Konversionselement (32) zur Erzeugung einer zweiten Sekundärstrahlung. Die Halbleiterschichtenfolge (2) ist in elektrisch unabhängig voneinander ansteuerbare und lateral benachbart angeordnete Segmente (21, 22) unterteilt. Die Konversionselemente (31, 32) sind auf Strahlungshauptseiten (25) der Segmente (21, 22) angebracht. Bei der ersten Sekundärstrahlung handelt es sich um farbiges Licht und bei der zweiten Sekundärstrahlung handelt es sich um weißes Licht.
(EN)
In at least one embodiment, the optoelectronic semiconductor chip (1) comprises a semiconductor layer sequence (2) having an active layer (20) for generating a primary radiation having a main wavelength less than 500 nm. The semiconductor chip (1) contains a first conversion element (31) for generating a first secondary radiation and a second conversion element (32) for generating a second secondary radiation. The semiconductor layer sequence (2) is divided into segments (21, 22) that can be controlled electrically independently of each other and that are arranged laterally adjacent to each other. The conversion elements (31, 32) are attached to main radiation sides (25) of the segments (21, 22). The first secondary radiation is colored light and the second secondary radiation is white light.
(FR)
Dans au moins un mode de réalisation, la puce de semi-conducteur optoélectronique (1) présente une suite de couches semi-conductrices (2) comprenant une couche active (20) servant à générer un rayonnement primaire ayant une longueur d'onde principale inférieure à 500 nm. La puce de semi-conducteur (1) contient un premier élément de conversion (31) servant à générer un premier rayonnement secondaire et un deuxième élément de conversion (32) servant à générer un deuxième rayonnement secondaire. La suite de couches semi-conductrices (2) est divisée en segments (21, 22), voisins latéralement, qui peuvent être excités électriquement indépendamment les uns des autres. Les éléments de conversion (31, 32) sont disposés sur les faces de rayonnement principales (25) des segments (21, 22). Le premier rayonnement secondaire est de la lumière de couleur tandis que le deuxième rayonnement secondaire est de la lumière blanche.
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