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1. WO2013138045 - FINE TUNING HIGHLY RESTIVE SUBSTRATE RESISTIVITY AND STRUCTURES THEREOF

Publication Number WO/2013/138045
Publication Date 19.09.2013
International Application No. PCT/US2013/027264
International Filing Date 22.02.2013
IPC
H01L 21/44 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
34the devices having semiconductor bodies not provided for in groups H01L21/06, H01L21/16, and H01L21/18159
44Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/36-H01L21/428158
CPC
H01L 21/324
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
18the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
324Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
H01L 22/14
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
22Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
10Measuring as part of the manufacturing process
14for electrical parameters, e.g. resistance, deep-levels, CV, diffusions by electrical means
H01L 22/20
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
22Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
20Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
H01L 2924/0002
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2924Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
0001Technical content checked by a classifier
0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Applicants
  • INTERNATIONAL BUSINESS MACHINES CORPORATION [US]/[US]
Inventors
  • GAMBINO, Jeffrey, P.
  • LIU, Derrick
  • MARTIN, Dale, W.
  • PREIFFER, Gerd
Agents
  • CANALE, Anthony, J.
Priority Data
13/420,63715.03.2012US
Publication Language English (EN)
Filing Language English (EN)
Designated States
Title
(EN) FINE TUNING HIGHLY RESTIVE SUBSTRATE RESISTIVITY AND STRUCTURES THEREOF
(FR) RÉGLAGE DE PRÉCISION DE LA RÉSISTIVITÉ D'UN SUBSTRAT EXTRÊMEMENT RÉSISTIF ET STRUCTURES CORRESPONDANTES
Abstract
(EN)
Methods are provided for fine tuning substrate resistivity. The method includes measuring a resistivity of a substrate (step 220) after an annealing process (step 215), and fine tuning (step 250) a subsequent annealing process (step 255) to achieve a target resistivity of the substrate (step 240). The fine tuning is based on the measured resistivity.
(FR)
L'invention concerne des procédés de réglage de précision de la résistivité d'un substrat. Le procédé comprend la mesure d'une résistivité d'un substrat (étape 220) après un processus de recuit (étape 215), et le réglage de précision (étape 250) d'un processus de recuit suivant (étape 255) pour obtenir la résistivité cible du substrat (étape 240). Le réglage de précision est fondé sur la résistivité mesurée.
Also published as
Latest bibliographic data on file with the International Bureau