Processing

Please wait...

Settings

Settings

Goto Application

1. WO2013136922 - POLYCRYSTALLINE SILICON WAFER

Publication Number WO/2013/136922
Publication Date 19.09.2013
International Application No. PCT/JP2013/054081
International Filing Date 20.02.2013
Chapter 2 Demand Filed 05.06.2013
IPC
C01B 33/02 2006.01
CCHEMISTRY; METALLURGY
01INORGANIC CHEMISTRY
BNON-METALLIC ELEMENTS; COMPOUNDS THEREOF
33Silicon; Compounds thereof
02Silicon
CPC
C30B 11/00
CCHEMISTRY; METALLURGY
30CRYSTAL GROWTH
BSINGLE-CRYSTAL-GROWTH
11Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
C30B 29/06
CCHEMISTRY; METALLURGY
30CRYSTAL GROWTH
BSINGLE-CRYSTAL-GROWTH
29Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
02Elements
06Silicon
H01L 29/04
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
02Semiconductor bodies ; ; Multistep manufacturing processes therefor
04characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes
H01L 29/0684
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
02Semiconductor bodies ; ; Multistep manufacturing processes therefor
06characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; ; characterised by the concentration or distribution of impurities within semiconductor regions
0684characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
H01L 29/16
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
02Semiconductor bodies ; ; Multistep manufacturing processes therefor
12characterised by the materials of which they are formed
16including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System
Applicants
  • JX日鉱日石金属株式会社 JX NIPPON MINING & METALS CORPORATION [JP]/[JP]
Inventors
  • 高村 博 TAKAMURA Hiroshi
  • 鈴木 了 SUZUKI Ryo
Agents
  • 小越 勇 OGOSHI Isamu
Priority Data
2012-05482612.03.2012JP
Publication Language Japanese (JA)
Filing Language Japanese (JA)
Designated States
Title
(EN) POLYCRYSTALLINE SILICON WAFER
(FR) PLAQUETTE DE SILICIUM POLYCRISTALLIN
(JA) 多結晶シリコンウエハ
Abstract
(EN)
The present invention addresses the issue of providing: a polycrystalline silicon wafer, which is manufactured by means of a melting method, which has an outer diameter of 450 mm or more, and which is characterized in that the depth of scratches on the wafer is 10 μm or less; a polycrystalline silicon wafer, which is manufactured by means of a melting method, which has an outer diameter of 450 mm or more, and which is characterized in having on the wafer, one scratch at most per one section when the whole wafer is divided into 100 mm by 100 mm squares, said scratch having a width of 40-100 μm and a depth more than 10 μm but equal to or less than 40 μm, and other scratches with a depth equal to or less than 10 μm; and a large polycrystalline silicon wafer, specifically a silicon wafer, which has a wafer size with an outer diameter of 450 mm or more, which generates a small number of small scratches on the wafer surface, and which has mechanical properties similar to those of single crystalline silicon wafers.
(FR)
La présente invention a pour objectif de pourvoir à : une plaquette de silicium polycristallin, qui est fabriquée au moyen d'un procédé de fusion, ayant un diamètre extérieur de 450 mm ou plus, et qui est caractérisée en ce que la profondeur des rayures sur la plaquette est de 10 μm ou moins ; une plaquette de silicium polycristallin, qui est fabriquée au moyen d'un procédé de fusion, ayant un diamètre extérieur de 450 mm ou plus, et qui est caractérisée en ce qu'elle présente sur la plaquette, une rayure au plus par section quand la totalité de la plaquette est divisée en carrés de 100 mm de côté, ladite rayure ayant une largeur de 40 à 100 μm et une profondeur supérieure à 10 μm mais égale ou inférieure à 40 μm, et d'autres rayures d'une profondeur égale ou inférieure à 10 μm ; et une plaquette de silicium polycristallin de grande dimension, plus spécifiquement une plaquette de silicium, ayant une taille de plaquette d'un diamètre extérieur de 450 mm ou plus, qui génère un petit nombre de petites rayures à la surface de la plaquette, et qui est douée de propriétés mécaniques similaires à celles des plaquettes de silicium monocristallin.
(JA)
溶解法により作製した外径が450mm以上の多結晶シリコンウエハであって、該ウエハに存在する傷の深さが10μm以下であることを特徴とする多結晶シリコンウエハ。溶解法により作製した外径が450mm以上の多結晶シリコンウエハであって、該ウエハに存在する幅が40μm以上100μm以下、深さが10μm超40μm以下である傷が、ウエハ全体を100mm角に区分した場合の一区分当たりの最大個数が1個以下であり、残余の傷の深さが10μm以下であることを特徴とする多結晶シリコンウエハ。大型の多結晶シリコンウエハであって、特にウエハサイズが外径450mm以上のシリコンウエハにおいて、ウエハ面の傷の発生が少量でかつ小さく、単結晶シリコンウエハの機械的物性に類似した大型の多結晶シリコンウエハを提供することを課題とする。
Also published as
Latest bibliographic data on file with the International Bureau