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1. (WO2013134432) LIGHT EMITTING DIODES WITH LOW REFRACTIVE INDEX MATERIAL LAYERS TO REDUCE LIGHT GUIDING EFFECTS
Latest bibliographic data on file with the International Bureau

Pub. No.: WO/2013/134432 International Application No.: PCT/US2013/029453
Publication Date: 12.09.2013 International Filing Date: 06.03.2013
IPC:
H01L 33/04 (2010.01) ,H01L 33/10 (2010.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33
Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02
characterised by the semiconductor bodies
04
with a quantum effect structure or superlattice, e.g. tunnel junction
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33
Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02
characterised by the semiconductor bodies
10
with a light reflecting structure, e.g. semiconductor Bragg reflector
Applicants:
SORAA, INC. [US/US]; 6500 Kaiser Drive Fremont, CA 94555, US
Inventors:
DAVID, Aurelien, J., F.; US
GRUNDMANN, Michael, J.; US
Agent:
LAMBERT, William, R.; Kilpatrick Townsend & Stockton LLP Two Embarcadero Center, 8th Floor San Francisco, CA 94111-3834, US
Priority Data:
61/607,18806.03.2012US
Title (EN) LIGHT EMITTING DIODES WITH LOW REFRACTIVE INDEX MATERIAL LAYERS TO REDUCE LIGHT GUIDING EFFECTS
(FR) DIODES ÉLECTROLUMINESCENTES À COUCHES DE MATÉRIAU À FAIBLE INDICE DE RÉFRACTION DESTINÉES À RÉDUIRE DES EFFETS DE GUIDAGE DE LUMIÈRE
Abstract:
(EN) Light emitting diodes including low refractive index layers for reducing guided light are disclosed. The light-emitting diodes include at least one n-doped layer, at least one pdoped layer, and an active region disposed between the at least one n-doped layer and the at least one p-doped layer. The active region comprises a light-emitting material. The lightemitting diode further comprises at least one low refractive index layer disposed in or around the active region.
(FR) La présente invention porte sur des diodes électroluminescentes comprenant des couches à faible indice de réfraction destinées à réduire une lumière guidée. Les diodes électroluminescentes comprennent au moins une couche dopée N, au moins une couche dopée P et une zone active disposée entre la au moins une couche dopée N et la au moins une couche dopée P. La zone active comprend un matériau électroluminescent. La diode électroluminescente comprend en outre au moins une couche à faible indice de réfraction disposée dans ou autour de la zone active.
front page image
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG)
Publication Language: English (EN)
Filing Language: English (EN)
Also published as:
EP2823515CN104247052JP2015509669