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1. WO2013128714 - RANGE SENSOR AND RANGE IMAGE SENSOR

Publication Number WO/2013/128714
Publication Date 06.09.2013
International Application No. PCT/JP2012/078363
International Filing Date 01.11.2012
IPC
G01S 17/89 2006.01
GPHYSICS
01MEASURING; TESTING
SRADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
17Systems using the reflection or reradiation of electromagnetic waves other than radio waves, e.g. lidar systems
88Lidar systems, specially adapted for specific applications
89for mapping or imaging
G01C 3/06 2006.01
GPHYSICS
01MEASURING; TESTING
CMEASURING DISTANCES, LEVELS OR BEARINGS; SURVEYING; NAVIGATION; GYROSCOPIC INSTRUMENTS; PHOTOGRAMMETRY OR VIDEOGRAMMETRY
3Measuring distances in line of sight; Optical rangefinders
02Details
06Use of electric means to obtain final indication
H01L 27/146 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
14including semiconductor components sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
144Devices controlled by radiation
146Imager structures
H01L 31/10 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
08in which radiation controls flow of current through the device, e.g. photoresistors
10characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
CPC
G01C 3/08
GPHYSICS
01MEASURING; TESTING
CMEASURING DISTANCES, LEVELS OR BEARINGS; SURVEYING; NAVIGATION; GYROSCOPIC INSTRUMENTS; PHOTOGRAMMETRY OR VIDEOGRAMMETRY
3Measuring distances in line of sight; Optical rangefinders
02Details
06Use of electric means to obtain final indication
08Use of electric radiation detectors
G01S 17/10
GPHYSICS
01MEASURING; TESTING
SRADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
17Systems using the reflection or reradiation of electromagnetic waves other than radio waves, e.g. lidar systems
02Systems using the reflection of electromagnetic waves other than radio waves
06Systems determining position data of a target
08for measuring distance only
10using transmission of interrupted, pulse-modulated waves
G01S 17/894
GPHYSICS
01MEASURING; TESTING
SRADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
17Systems using the reflection or reradiation of electromagnetic waves other than radio waves, e.g. lidar systems
88Lidar systems specially adapted for specific applications
89for mapping or imaging
8943D imaging with simultaneous measurement of time-of-flight at a 2D array of receiver pixels, e.g. time-of-flight cameras or flash lidar
G01S 7/4863
GPHYSICS
01MEASURING; TESTING
SRADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
7Details of systems according to groups G01S13/00, G01S15/00, G01S17/00
48of systems according to group G01S17/00
483Details of pulse systems
486Receivers
4861Circuits for detection, sampling, integration or read-out
4863Detector arrays, e.g. charge-transfer gates
H01L 27/14609
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
14including semiconductor components sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
144Devices controlled by radiation
146Imager structures
14601Structural or functional details thereof
14609Pixel-elements with integrated switching, control, storage or amplification elements
H01L 27/1461
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
14including semiconductor components sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
144Devices controlled by radiation
146Imager structures
14601Structural or functional details thereof
14609Pixel-elements with integrated switching, control, storage or amplification elements
1461characterised by the photosensitive area
Applicants
  • 浜松ホトニクス株式会社 HAMAMATSU PHOTONICS K.K. [JP]/[JP]
Inventors
  • 間瀬 光人 MASE Mitsuhito
  • 鈴木 高志 SUZUKI Takashi
  • 平光 純 HIRAMITSU Jun
Agents
  • 長谷川 芳樹 HASEGAWA Yoshiki
Priority Data
2012-04131728.02.2012JP
Publication Language Japanese (JA)
Filing Language Japanese (JA)
Designated States
Title
(EN) RANGE SENSOR AND RANGE IMAGE SENSOR
(FR) CAPTEUR DE DISTANCE ET CAPTEUR D'IMAGES
(JA) 距離センサ及び距離画像センサ
Abstract
(EN)
 A first semiconductor area (FD1) is arranged inside of a charge generating area, in which charge is generated in response to incident light, so as to be surrounded by the charge generating area, and collects signal charge from the charge generating area. A third semiconductor area (FD31) is arranged outside of the charge generating area so as to surround said area, and collects unnecessary charge from the charge generating area. A photogate electrode (PG1) is arranged on the charge generating area. A first gate electrode (TX1) is arranged between the first semiconductor area (FD1) and the charge generating area, and causes the signal charge from the charge generating area to flow into the first semi conductor area (FD1) in response to an input signal. A third gate electrode (TX31) is arranged between the third semiconductor area (FD31) and the charge generating area, and causes the unnecessary charge from the charge generating area to flow into the third semi conductor area (FD31) in response to an input signal.
(FR)
 Une première zone de semi-conducteurs (FD1) est disposée à l'intérieur d'une zone génératrice de charge, dans laquelle une charge est générée en réponse à la lumière incidente, de façon à être entourée par la zone génératrice de charge, et recueille une charge de signaux provenant de la zone génératrice de charge. Une troisième zone de semi-conducteurs (FD31) est disposée à l'extérieur de la zone génératrice de charge de manière à entourer ladite zone, et recueille une charge inutile provenant de la zone génératrice de charge. Une électrode de photo-grille (PG1) est disposée sur la zone génératrice de charge. Une première électrode de grille (TX1) est agencée entre la première zone de semi-conducteurs (FD1) et la zone génératrice de charge, et amène la charge de signaux provenant de la zone génératrice de charge à s'écouler dans la première zone de semi-conducteurs (FD1) en réponse à un signal d'entrée. Une troisième électrode de grille (TX31) est agencée entre la troisième zone de semi-conducteurs (FD31) et la zone génératrice de charge, et amène la charge inutile provenant de la zone génératrice de charge à s'écouler dans la troisième zone de semi-conducteurs (FD31) en réponse à un signal d'entrée.
(JA)
 第一半導体領域FD1は、入射光に応じて電荷が発生する電荷発生領域に囲まれるように電荷発生領域の内側に配置され、電荷発生領域からの信号電荷を収集する。第三半導体領域FD3は、電荷発生領域を囲むように電荷発生領域の外側に配置され、電荷発生領域からの不要電荷を収集する。フォトゲート電極PG1は、電荷発生領域の上に配置される。第一ゲート電極TX1は、第一半導体領域FD1と電荷発生領域との間に配置され、入力信号に応じて電荷発生領域からの信号電荷を第一半導体領域FD1に流入させる。第三ゲート電極TX3は、第三半導体領域FD3と電荷発生領域との間に配置され、入力信号に応じて電荷発生領域からの不要電荷を第三半導体領域FD3に流入させる。
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