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1. (WO2013126698) FLEXIBLE HIGH-VOLTAGE THIN FILM TRANSISTORS

Pub. No.:    WO/2013/126698    International Application No.:    PCT/US2013/027318
Publication Date: Fri Aug 30 01:59:59 CEST 2013 International Filing Date: Sat Feb 23 00:59:59 CET 2013
IPC: H01L 23/48
Applicants: MASSACHUSETTS INSTITUTE OF TECHNOLOGY
Inventors: SMITH, Melissa Alyson
AKINWANDE, Akintunde I.
Title: FLEXIBLE HIGH-VOLTAGE THIN FILM TRANSISTORS
Abstract:
A flexible high-voltage thin-film transistor includes a gate electrode, a source electrode, a drain electrode, a dielectric layer, and a flexible semiconductor layer. The flexible semiconductor layer serves as a channel for the transistor and is in electrical communication with the source electrode and the drain electrode. The drain electrode is laterally offset from the gate electrode. The dielectric layers is configured and arranged with respect to other elements of the transistor such that the transistor is stably operable to facilitate switching of relatively high drain voltages using relatively small controlling gate voltages.