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1. (WO2013126153) METHOD FOR PROCESSING SEMICONDUCTORS USING A COMBINATION OF ELECTRON BEAM AND OPTICAL LITHOGRAPHY

Pub. No.:    WO/2013/126153    International Application No.:    PCT/US2013/020611
Publication Date: Fri Aug 30 01:59:59 CEST 2013 International Filing Date: Wed Jan 09 00:59:59 CET 2013
IPC: H01L 23/544
G03F 7/20
G03F 9/00
Applicants: RAYTHEON COMPANY
Inventors: DUVAL, Paul, J.
TABATABAIE, Kamal
DAVIS, William, J.
Title: METHOD FOR PROCESSING SEMICONDUCTORS USING A COMBINATION OF ELECTRON BEAM AND OPTICAL LITHOGRAPHY
Abstract:
Forming an alignment mark on a semiconductor structure using an optical lithography to form a metal alignment mark on a substrate of the structure, using the formed metal alignment mark to form a first feature of a semiconductor device being formed on the substrate using optical lithography, and using the formed metal alignment mark to form a second, different feature for the semiconductor using electron beam lithography. In one embodiment, the first feature is an ohmic contact, the second feature is a Schottky contact, the metal alignment mark is a refractory metal or a refractory metal compound having an atomic weight greater than 60 such as TaN and the semiconductor device is a GaN semiconductor device. A semiconductor structure having a metal alignment mark on a zero layer of the structure, the metal alignment mark is a TaN and the semiconductor is GaN.