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1. (WO2013125534) THERMOELECTRIC CONVERSION MATERIAL
Latest bibliographic data on file with the International Bureau   

Pub. No.: WO/2013/125534 International Application No.: PCT/JP2013/054031
Publication Date: 29.08.2013 International Filing Date: 19.02.2013
IPC:
H01L 35/32 (2006.01) ,H01L 35/16 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
35
Thermoelectric devices comprising a junction of dissimilar materials, i.e. exhibiting Seebeck or Peltier effect with or without other thermoelectric effects or thermomagnetic effects; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
28
operating with Peltier or Seebeck effect only
32
characterised by the structure or configuration of the cell or thermo-couple forming the device
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
35
Thermoelectric devices comprising a junction of dissimilar materials, i.e. exhibiting Seebeck or Peltier effect with or without other thermoelectric effects or thermomagnetic effects; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
12
Selection of the material for the legs of the junction
14
using inorganic compositions
16
comprising tellurium or selenium or sulfur
Applicants:
国立大学法人九州工業大学 KYUSHU INSTITUTE OF TECHNOLOGY [JP/JP]; 福岡県北九州市戸畑区仙水町1番1号 1-1, Sensui-cho, Tobata-ku, Kitakyushu-shi, Fukuoka 8048550, JP
リンテック株式会社 LINTEC CORPORATION [JP/JP]; 東京都板橋区本町23番23号 23-23, Honcho, Itabashi-ku, Tokyo 1730001, JP
Inventors:
武藤 豪志 MUTOU, Tsuyoshi; JP
宮崎 康次 MIYAZAKI, Koji; JP
畑迫 芳佳 HATASAKO, Yoshika; JP
加藤 邦久 KATO, Kunihisa; JP
Agent:
大谷 保 OHTANI, Tamotsu; 東京都港区虎ノ門三丁目25番2号 ブリヂストン虎ノ門ビル6階 特許業務法人大谷特許事務所 OHTANI PATENT OFFICE, Bridgestone Toranomon Bldg. 6F., 25-2, Toranomon 3-chome, Minato-ku, Tokyo 1050001, JP
Priority Data:
2012-03937724.02.2012JP
Title (EN) THERMOELECTRIC CONVERSION MATERIAL
(FR) MATÉRIAU DE CONVERSION THERMOÉLECTRIQUE
(JA) 熱電変換材料
Abstract:
(EN) The present invention provides a thermoelectric conversion material that comprises a nanopore-containing structure and has low thermal conductivity and an improved thermoelectric performance index. Said thermoelectric conversion material comprises a thermoelectric semiconductor layer formed on top of a block-copolymer substrate comprising a nanopore-containing block copolymer that comprises the following: a polymer unit (A) comprising a monomer for which the glass transition temperature of the homopolymer thereof is greater than or equal to 50°C; and a polymer unit (B) comprising a conjugated diene polymer.
(FR) La présente invention concerne un matériau de conversion thermoélectrique qui comprend une structure contenant des nanopores et a une faible conductivité thermique et un indice de performance thermoélectrique amélioré. Ledit matériau de conversion thermoélectrique comprend une couche semi-conductrice thermoélectrique formée sur un substrat copolymère bloc comprenant un copolymère bloc contenant des nanopores qui comprend : une unité polymère (A) comprenant un monomère pour lequel la température de transition vitreuse de son homopolymère est supérieure ou égale à 50 °C; et une unité polymère (B) comprenant un polymère diène conjugué.
(JA)  本発明は、ナノオーダーに制御された微細孔を有する構造であって、熱伝導率が低く、熱電性能指数が向上した熱電変換材料を提供するものであり、微細孔を有するブロックコポリマーからなるブロックコポリマー基板上に熱電半導体層が形成された熱電変換材料において、前記ブロックコポリマーが、ホモポリマーのガラス転移温度が50℃以上であるモノマーからなるポリマーユニット(A)と、共役ジエン系ポリマーからなるポリマーユニット(B)から構成される熱電変換材料である。
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)