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1. (WO2013125469) MAGNETIC MATERIAL SPUTTERING TARGET AND MANUFACTURING METHOD FOR SAME
Latest bibliographic data on file with the International Bureau   

Pub. No.: WO/2013/125469 International Application No.: PCT/JP2013/053753
Publication Date: 29.08.2013 International Filing Date: 15.02.2013
Chapter 2 Demand Filed: 25.06.2013
IPC:
C23C 14/34 (2006.01) ,G11B 5/64 (2006.01) ,G11B 5/851 (2006.01)
C CHEMISTRY; METALLURGY
23
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
C
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
14
Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
22
characterised by the process of coating
34
Sputtering
G PHYSICS
11
INFORMATION STORAGE
B
INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
5
Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
62
Record carriers characterised by the selection of the material
64
comprising only the magnetic material without bonding agent
G PHYSICS
11
INFORMATION STORAGE
B
INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
5
Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
84
Processes or apparatus specially adapted for manufacturing record carriers
851
Coating a support with a magnetic layer by sputtering
Applicants:
JX日鉱日石金属株式会社 JX NIPPON MINING & METALS CORPORATION [JP/JP]; 東京都千代田区大手町二丁目6番3号 6-3, Otemachi 2-chome, Chiyoda-ku, Tokyo 1008164, JP
Inventors:
荒川 篤俊 ARAKAWA Atsutoshi; JP
高見 英生 TAKAMI Hideo; JP
中村 祐一郎 NAKAMURA Yuichiro; JP
Agent:
小越 勇 OGOSHI Isamu; 東京都港区虎ノ門2丁目9番14号 発明会館5階 小越国際特許事務所 OGOSHI International Patent Office, HATSUMEIKAIKAN 5F, 9-14, Toranomon 2-chome, Minato-ku, Tokyo 1050001, JP
Priority Data:
2012-03656222.02.2012JP
Title (EN) MAGNETIC MATERIAL SPUTTERING TARGET AND MANUFACTURING METHOD FOR SAME
(FR) CIBLE DE PULVÉRISATION CATHODIQUE DE MATIÈRE MAGNÉTIQUE ET SON PROCÉDÉ DE FABRICATION
(JA) 磁性材スパッタリングターゲット及びその製造方法
Abstract:
(EN) A magnetic material sputtering target characterized in that at least 60% of a surface for observing oxides in the target is constituted by oxide particles such that in the observed surface of the target, the average particle size of the oxide particles is 1.5 µm or less, and if the maximum diameter is the value between the two points on the outer periphery of an oxide particle with the maximum distance therebetween, and the minimum diameter is the value between the two parallel straight lines that sandwich the particle with the minimum distance therebetween, then the difference between the maximum diameter and the minimum diameter is 0.4 µm or less. The obtained magnetic material sputtering target having non-magnetic material particles dispersed therein is capable of suppressing abnormal electrical discharge by the oxide, which is a cause of particle generation during sputtering.
(FR) La présente invention concerne une cible de pulvérisation cathodique de matière magnétique caractérisée en ce qu'au moins 60 % d'une surface d'observation d'oxydes de la cible est constituée de particules d'oxyde de façon telle que, dans la surface observée de la cible, la taille moyenne de particules des particules d'oxyde est de 1,5 µm au maximum et, si le diamètre maximal est la valeur entre les deux points situés sur la périphérie extérieure d'une particule d'oxyde avec la distance maximale entre eux, et si le diamètre minimal est la valeur entre les deux lignes droites parallèles qui prennent en sandwich la particule avec la distance minimale entre elles, alors la distance entre le diamètre maximal et le diamètre minimal est de 0,4 µm au maximum. Selon l'invention, la cible de pulvérisation cathodique de matière magnétique obtenue comprenant des particules de matière amagnétique dispersées en son sein est capable de supprimer une décharge électrique anormale par l'oxyde, qui est une cause de génération de particules pendant une pulvérisation cathodique.
(JA) 磁性材スパッタリングターゲットであって、ターゲット中の酸化物を観察する平面において、ターゲット中に存在する酸化物粒子の平均粒径が1.5μm以下である酸化物であり、ターゲット中の酸化物を観察する平面において、酸化物粒子の外周上にある任意の2点の距離の最大値を最大径とし、平行な2本の直線で同粒子を挟んだときの2直線間の距離の最小値を最小径とした場合、最大径と最小径の差が0.4μm以下である酸化物粒子が、ターゲット観察面において60%以上を占めることを特徴とする磁性材スパッタリングターゲット。スパッタリング時のパーティクル発生の原因となる酸化物の異常放電を抑制することができる非磁性材粒子分散型磁性材スパッタリングターゲットを得る。
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)