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1. (WO2013125377) SEMICONDUCTOR ELEMENT, RADIATION DETECTOR, AND METHOD FOR MANUFACTURING SEMICONDUCTOR ELEMENT

Pub. No.:    WO/2013/125377    International Application No.:    PCT/JP2013/053087
Publication Date: Fri Aug 30 01:59:59 CEST 2013 International Filing Date: Sat Feb 09 00:59:59 CET 2013
IPC: H01L 21/3205
G01T 1/20
H01L 21/768
H01L 23/522
H01L 27/144
H01L 27/146
H01L 29/786
Applicants: FUJIFILM CORPORATION
富士フイルム株式会社
Inventors: ITO Takaaki
伊藤 孝明
OKADA Yoshihiro
岡田 美広
Title: SEMICONDUCTOR ELEMENT, RADIATION DETECTOR, AND METHOD FOR MANUFACTURING SEMICONDUCTOR ELEMENT
Abstract:
Provided are a semiconductor element, a radiation detector, and a method for manufacturing a semiconductor element, in which corrosion of the wiring layer can be suppressed even if the moisture-proofing of the external connection terminal is insufficient. At the connecting part (62), an oxide conductor layer (54) is provided so as to be adjacent (either above or below) a second wiring layer (44), and an insulating film (60) is formed on the second wiring layer (44) and the oxide conductor layer (54). The oxide conductor layer (54), and an external connection terminal (50) provided to the opening of a protective layer (34) provided on the insulating film (60), are electrically connected by a contact hole (52). The second wiring layer (44) is not in direct contact with the contact hole (52) or the external connection terminal (50), and is electrically connected via the oxide conductor layer (54).