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1. (WO2013125209) POLYCRYSTALLINE SILICON AND DEVICE FOR PRODUCING POLYCRYSTALLINE SILICON
Latest bibliographic data on file with the International Bureau   

Pub. No.: WO/2013/125209 International Application No.: PCT/JP2013/000894
Publication Date: 29.08.2013 International Filing Date: 19.02.2013
IPC:
C01B 33/035 (2006.01)
C CHEMISTRY; METALLURGY
01
INORGANIC CHEMISTRY
B
NON-METALLIC ELEMENTS; COMPOUNDS THEREOF
33
Silicon; Compounds thereof
02
Silicon
021
Preparation
027
by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
035
by decomposition or reduction of gaseous or vaporised silicon compounds in the presence of heated filaments of silicon, carbon or a refractory metal, e.g. tantalum or tungsten, or in the presence of heated silicon rods on which the formed silicon is deposited, a silicon rod being obtained, e.g. Siemens process
Applicants:
信越化学工業株式会社 SHIN-ETSU CHEMICAL CO., LTD. [JP/JP]; 東京都千代田区大手町二丁目6番1号 6-1, Ohtemachi 2-chome, Chiyoda-ku, Tokyo 1000004, JP
Inventors:
黒澤 靖志 KUROSAWA, Yasushi; JP
祢津 茂義 NETSU, Shigeyoshi; JP
Agent:
大野 聖二 OHNO, Seiji; 東京都千代田区丸の内1丁目6番5号 丸の内北口ビル21階 大野総合法律事務所 OHNO & PARTNERS, Marunouchi Kitaguchi Building 21F, 6-5, Marunouchi 1-chome, Chiyoda-ku, Tokyo 1000005, JP
Priority Data:
2012-03877624.02.2012JP
Title (EN) POLYCRYSTALLINE SILICON AND DEVICE FOR PRODUCING POLYCRYSTALLINE SILICON
(FR) SILICIUM POLYCRISTALLIN ET DISPOSITIF DE PRODUCTION DE SILICIUM POLYCRISTALLIN
(JA) 多結晶シリコンおよび多結晶シリコン製造装置
Abstract:
(EN) In the present invention, six gas nozzles (9) are disposed at hexagonally symmetric positions on an imaginary circle (S) having a center at the center of a substrate (5). Of the gas nozzles, four gas nozzles (9v) are vertical jetting nozzles of which the direction of the central vector of gas jetting is the direction perpendicular to the substrate (5), and two gas nozzles (9c) are oblique jetting nozzles of which the central vector of gas jetting has a component in the direction tangential to the imaginary circle (S). By means of the component in the direction tangential to the imaginary circle (S), the reaction gas supplied from the oblique jetting nozzles (9c) imparts rotational force to the circulation of reaction gas in a chamber (1), and the reaction gas forms a state of circulating as a whole while rotating within the chamber (1). Also, the state of mixture of the reaction gas becomes yet more favorable by means of the rotational component.
(FR) Dans la présente invention, six buses de gaz (9) sont disposées à des positions hexagonalement symétriques sur un cercle imaginaire (S) ayant un centre au niveau du centre d'un substrat (5). Parmi les buses de gaz, quatre buses de gaz (9v) sont des buses à jet vertical dont la direction du vecteur central de jet de gaz est la direction perpendiculaire au substrat (5), et deux buses de gaz (9c) sont des buses à jet oblique dont le vecteur central du jet de gaz a un composant dans la direction tangentielle au cercle imaginaire (S). Au moyen du composant dans la direction tangentielle au cercle imaginaire (S), le gaz de réaction fourni par les buses à jet oblique (9c) impartit une force de rotation à la circulation du gaz de réaction dans une chambre (1), et le gaz de réaction forme un état de circulation comme un ensemble tout en étant entraîné en rotation dans la chambre (1). En outre, l'état du mélange du gaz de réaction devient encore plus favorable au moyen du composant de rotation.
(JA)  6つのガスノズル9が底板5の中央に中心を有する仮想円S上の6回対称位置に配置されている。このうち、4つのガスノズル9vは、ガス噴出の中心ベクトルの方向が底板5に垂直な方向である鉛直噴出ノズルであり、2つのガスノズル9cは、ガス噴出の中心ベクトルが仮想円Sの接線方向に成分を有している斜方噴出ノズルである。斜方噴出ノズル9cから供給される反応ガスは、その仮想円Sの接線方向に成分により、チャンバ1内での反応ガスの循環に旋回力を付与し、反応ガスがチャンバ1内を旋回しながら全体循環する状態を形成する。そして、この旋回成分により反応ガスの混合状態は更に良好なものとなる。
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)