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1. (WO2013124719) METHODS OF PROVIDING THIN LAYERS OF CRYSTALLINE SEMICONDUCTOR MATERIAL, AND RELATED STRUCTURES AND DEVICES

Pub. No.:    WO/2013/124719    International Application No.:    PCT/IB2013/000139
Publication Date: Fri Aug 30 01:59:59 CEST 2013 International Filing Date: Sat Feb 02 00:59:59 CET 2013
IPC: H01L 21/306
H01L 21/3213
H01L 21/762
Applicants: SOITEC
Inventors: SADAKA, Mariam
RADU, Ionut
Title: METHODS OF PROVIDING THIN LAYERS OF CRYSTALLINE SEMICONDUCTOR MATERIAL, AND RELATED STRUCTURES AND DEVICES
Abstract:
Methods of fabricating semiconductor devices include forming a metal silicide in a portion of a crystalline silicon layer, and etching the metal silicide using an etchant selective to the metal silicide relative to the crystalline silicon to provide a thin crystalline silicon layer. Silicon-on-insulator (SOI) substrates may be formed by providing a layer of crystalline silicon over a base substrate with a dielectric material between the layer of crystalline silicone and the base substrate, and thinning the layer of crystalline silicon by forming a metal silicide layer in a portion of the crystalline silicon, and then etching the metal silicide layer using an etchant selective to the metal silicide layer relative to the crystalline silicon.