Search International and National Patent Collections

1. (WO2013123786) THIN FILM TRANSISTOR ARRAY SUBSTRATE AND PRODUCING METHOD THEREOF

Pub. No.:    WO/2013/123786    International Application No.:    PCT/CN2012/084970
Publication Date: Fri Aug 30 01:59:59 CEST 2013 International Filing Date: Thu Nov 22 00:59:59 CET 2012
IPC: H01L 21/77
H01L 27/12
Applicants: BOE TECHNOLOGY GROUP CO., LTD.
京东方科技集团股份有限公司
Inventors: NING, Ce
宁策
LV, Zhijun
吕志军
Title: THIN FILM TRANSISTOR ARRAY SUBSTRATE AND PRODUCING METHOD THEREOF
Abstract:
Disclosed are a thin film transistor array substrate and a producing method thereof in the embodiments of the present invention, the producing method comprising: forming an active layer thin film and a conductive layer thin film on a substrate; depositing a source/drain layer thin film on the conductive layer thin film, treating the conductive layer thin film and the source/drain layer thin film using gray tone or half tone masking process, to form at least two data wires, a pixel electrode and source/drain electrodes of the thin film transistor(TFT); after depositing an insulating layer thin film covered the active layer thin film, the source/drain electrodes, the data wires and the pixel electrode, forming a through hole and a gate insulating layer of the TFT on the insulating layer, to form an active layer of the TFT; forming a gate electrode of the TFT and at least two gate scanning wires cross with the data wires.