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Machine translation
1. (WO2013123415) MEMORY CELL COMPRISING FIRST AND SECOND TRANSISTORS AND METHODS OF OPERATING
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2013/123415    International Application No.:    PCT/US2013/026466
Publication Date: 22.08.2013 International Filing Date: 15.02.2013
IPC:
G11C 11/40 (2006.01), H01L 21/8239 (2006.01), H01L 27/10 (2006.01)
Applicants: ZENO SEMICONDUCTOR, INC. [US/US]; 1657 Curtner Ave. San Jose, CA 95125 (US).
WIDJAJA, Yuniarto [ID/US]; (US) (US only).
HAN, Jin-Woo [US/US]; (US) (US only).
LOUIE, Benjamin S. [US/US]; (US) (US only)
Inventors: WIDJAJA, Yuniarto; (US).
HAN, Jin-Woo; (US).
LOUIE, Benjamin S.; (US)
Agent: CANNON, Alan W.; 1999 South Bascom Ave., Suite 700 Campbell, CA 95008 (US)
Priority Data:
61/599,425 16.02.2012 US
13/746,523 22.01.2013 US
61/621,546 08.04.2012 US
Title (EN) MEMORY CELL COMPRISING FIRST AND SECOND TRANSISTORS AND METHODS OF OPERATING
(FR) CELLULE MÉMOIRE COMPORTANT DES PREMIER ET SECOND TRANSISTORS ET PROCÉDÉS DE FONCTIONNEMENT ASSOCIÉS
Abstract: front page image
(EN)Semiconductor memory cells, array and methods of operating are disclosed. In one instance, a memory cell includes a bi-stable floating body transistor and an access device; wherein the bi-stable floating body transistor and the access device are electrically connected in series.
(FR)L'invention concerne des cellules mémoires à semi-conducteurs, une matrice mémoire et des procédés de fonctionnement associés. Dans un exemple, une cellule mémoire comprend un transistor bistable à corps flottant et un dispositif d'accès, le transistor bistable à corps flottant et le dispositif d'accès étant électriquement connectés en série.
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG).
Publication Language: English (EN)
Filing Language: English (EN)