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1. (WO2013123317) POST-CMP REMOVAL USING COMPOSITIONS AND METHOD OF USE
Latest bibliographic data on file with the International Bureau   

Pub. No.: WO/2013/123317 International Application No.: PCT/US2013/026326
Publication Date: 22.08.2013 International Filing Date: 15.02.2013
IPC:
C09K 3/14 (2006.01) ,H01L 21/304 (2006.01)
Applicants: ENTEGRIS, INC.[US/US]; 7 Commerce Drive Danbury, CT 06810, US
Inventors: LIU, Jun; US
BARNES, Jeffrey A.; US
COOPER, Emanuel I.; US
SUN, Laisheng; US
THOMAS, Elizabeth; US
CHANG, Jason; US
Agent: FUIERER, Tristan; Moore & Van Allen PLLC P.O. Box 13706 Research Triangle Park, North Carolina 27709, US
Priority Data:
61/599,16215.02.2012US
61/651,28724.05.2012US
61/656,99207.06.2012US
61/661,16018.06.2012US
Title (EN) POST-CMP REMOVAL USING COMPOSITIONS AND METHOD OF USE
(FR) ELIMINATION POST-CMP À L'AIDE DE COMPOSITIONS ET PROCÉDÉ D'UTILISATION
Abstract:
(EN) An amine-free composition and process for cleaning post-chemical mechanical polishing (CMP) residue and contaminants from a microelectronic device having said residue and contaminants thereon. The amine-free composition preferably includes at least one oxidizing agent, at least one complexing agent, at least one basic compound, and water and has a pH in the range from about 2.5 to about 11.5. The composition achieves highly efficacious cleaning of the post-CMP residue and contaminant material from the surface of the microelectronic device without compromising the low-k dielectric material or the copper interconnect material.
(FR) L'invention concerne une composition exempte d'amine et un procédé pour le nettoyage de résidu et de contaminants post-polissage chimico-mécanique (CMP) à partir d'un dispositif microélectronique ayant lesdits résidu et contaminants sur lui. La composition exempte d'amine comprend de préférence au moins un agent oxydant, au moins un agent complexant, au moins un composé basique et de l'eau et a un pH dans la plage d'environ 2,5 à environ 11,5. La composition atteint un nettoyage hautement efficace de la matière de résidu et de contaminants post-CMP à partir de la surface du dispositif microélectronique sans compromettre la matière diélectrique à faible k ou la matière d'interconnexion en cuivre.
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG)
Publication Language: English (EN)
Filing Language: English (EN)