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1. (WO2013123140) ALTERNATE MATERIALS AND MIXTURES TO MINIMIZE PHOSPHORUS BUILDUP IN IMPLANT APPLICATIONS
Latest bibliographic data on file with the International Bureau   

Pub. No.: WO/2013/123140 International Application No.: PCT/US2013/026064
Publication Date: 22.08.2013 International Filing Date: 14.02.2013
IPC:
H01L 21/265 (2006.01) ,H01J 37/317 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
26
Bombardment with wave or particle radiation
263
with high-energy radiation
265
producing ion implantation
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
J
ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
37
Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
30
Electron-beam or ion-beam tubes for localised treatment of objects
317
for changing properties of the objects or for applying thin layers thereon, e.g. ion implantation
Applicants:
ADVANCED TECHNOLOGY MATERIALS, INC. [US/US]; 7 Commerce Drive Danbury, CT 06810-4169, US
Inventors:
RAY, Richard, S.; US
Agent:
HULTQUIST, Stevens, J.; HULTQUIST IP P.O. Box 14329 Research Triangle Park, NC 27709, US
Priority Data:
61/598,70414.02.2012US
Title (EN) ALTERNATE MATERIALS AND MIXTURES TO MINIMIZE PHOSPHORUS BUILDUP IN IMPLANT APPLICATIONS
(FR) MATÉRIAUX ET MÉLANGES ALTERNATIFS POUR RÉDUIRE À UN MINIMUM L'ACCUMULATION DE PHOSPHORE DANS DES APPLICATIONS D'IMPLANTATION
Abstract:
(EN) Systems and processes for utilizing phosphorus fluoride in place of, or in combination with, phosphine as a phosphorus dopant source composition, to reduce buildup of unwanted phosphorus deposits in ion implanter systems. The phosphorus fluoride may comprise PF3 and/or PF5. Phosphorus fluoride and phosphine may be co-flowed to the ion implanter, or each of such phosphorus dopant source materials can be alternatingly and sequentially flowed separately to the ion implanter, to achieve reduction in unwanted buildup of phosphorus solids in the implanter, relative to a corresponding process system utilizing only phosphine as the phosphorus dopant source material.
(FR) L'invention concerne des systèmes et des traitements qui permettent d'utiliser du fluorure de phosphore à la place de la phosphine, ou en combinaison avec celle-ci, comme composition de source de dopant au phosphore, afin de réduire l'accumulation de dépôts de phosphore indésirables dans des systèmes d'implantation ionique. Le fluorure de phosphore peut comporter du PF3 et/ou du PF5. Le fluorure de phosphore et la phosphine peuvent être amenés à s'écouler conjointement vers le dispositif d'implantation ionique, ou chacun de ces matériaux sources de dopant au phosphore peuvent être amenés à s'écouler de manière alternée, séquentiellement et séparément, vers le dispositif d'implantation ionique, afin d'obtenir une réduction de l'accumulation indésirable de phosphore à l'état solide dans le dispositif d'implantation, par rapport à un système de traitement correspondant utilisant uniquement de la phosphine en tant que matériau source de dopant au phosphore.
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG)
Publication Language: English (EN)
Filing Language: English (EN)