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1. (WO2013122668) APPARATUS FOR ACHIEVING SUSTAINED ANISOTROPIC CRYSTAL GROWTH ON THE SURFACE OF A SILICON MELT

Pub. No.:    WO/2013/122668    International Application No.:    PCT/US2012/069069
Publication Date: Fri Aug 23 01:59:59 CEST 2013 International Filing Date: Thu Dec 13 00:59:59 CET 2012
IPC: C30B 11/00
C30B 29/06
C30B 15/00
C30B 15/06
C30B 15/14
Applicants: VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC.
Inventors: MACKINTOSH, Brian H.
KELLERMAN, Peter L.
SUN, Dawei
Title: APPARATUS FOR ACHIEVING SUSTAINED ANISOTROPIC CRYSTAL GROWTH ON THE SURFACE OF A SILICON MELT
Abstract:
An apparatus for growing a crystalline sheet from a melt includes a cold block assembly. The cold block assembly may include a cold block and a shield surrounding the cold block and being at an elevated temperature with respect to that of the cold block, the shield defining an opening disposed along a surface of the cold block proximate a melt surface that defines a cold area comprising a width along a first direction of the cold block, the cold area operable to provide localized cooling of a region of the melt surface proximate the cold block. The apparatus may further include a crystal puller arranged to draw a crystalline seed in a direction perpendicular to the first direction when the cold block assembly is disposed proximate the melt surface.