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|1. (WO2013122023) SPIN IMPLANTATION ELECTRODE STRUCTURE AND SPIN TRANSPORT ELEMENT|
|Title:||SPIN IMPLANTATION ELECTRODE STRUCTURE AND SPIN TRANSPORT ELEMENT|
[Problem] To provide a spin implantation electrode structure and spin transport element that suppress spin scattering at interfaces, which arises because of offsetting of lattice constants between semiconductor channel layers and tunnel films and between tunnel films and ferromagnetic layers. [Solution] The spin implantation electrode structure is characterized by being provided with a semiconductor channel layer, a tunnel film provided on the semiconductor channel layer, a nonmagnetic spinel film provided on the tunnel film, and a ferromagnetic layer provided on the nonmagnetic spinel film.