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1. (WO2013122023) SPIN IMPLANTATION ELECTRODE STRUCTURE AND SPIN TRANSPORT ELEMENT

Pub. No.:    WO/2013/122023    International Application No.:    PCT/JP2013/053179
Publication Date: Fri Aug 23 01:59:59 CEST 2013 International Filing Date: Wed Feb 13 00:59:59 CET 2013
IPC: H01L 29/82
G11B 5/39
H01L 21/8246
H01L 27/105
Applicants: TDK CORPORATION
TDK株式会社
Inventors: SASAKI Tomoyuki
佐々木 智生
OIKAWA Tohru
及川 亨
KOIKE Hayato
小池 勇人
Title: SPIN IMPLANTATION ELECTRODE STRUCTURE AND SPIN TRANSPORT ELEMENT
Abstract:
[Problem] To provide a spin implantation electrode structure and spin transport element that suppress spin scattering at interfaces, which arises because of offsetting of lattice constants between semiconductor channel layers and tunnel films and between tunnel films and ferromagnetic layers. [Solution] The spin implantation electrode structure is characterized by being provided with a semiconductor channel layer, a tunnel film provided on the semiconductor channel layer, a nonmagnetic spinel film provided on the tunnel film, and a ferromagnetic layer provided on the nonmagnetic spinel film.