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1. (WO2013120990) HEMT HETEROSTRUCTURE AND A METHOD OF HEMT MANUFACTURING
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2013/120990    International Application No.:    PCT/EP2013/053067
Publication Date: 22.08.2013 International Filing Date: 15.02.2013
IPC:
H01L 29/778 (2006.01), H01L 29/43 (2006.01), H01L 29/20 (2006.01)
Applicants: ISOS TECHNOLOGIES SARL [LU/LU]; 5, boulevard Royal L-2449 Luxembourg (LU)
Inventors: CABAN, Piotr; (PL).
STRUPINSKI, Wlodzimierz; (PL)
Agent: SIELEWIESIUK, Jakub; AOMB Polska Sp. z o.o. Emilii Plater 53, 28 floor PL-00-113 Warszawa (PL)
Priority Data:
P.398149 17.02.2012 PL
Title (EN) HEMT HETEROSTRUCTURE AND A METHOD OF HEMT MANUFACTURING
(FR) HÉTÉROSTRUCTURE HEMT ET PROCÉDÉ DE FABRICATION D'HEMT
Abstract: front page image
(EN)The present invention relates to a HEMT heterostructure, including a substrate (8) and a buffer layer (7), characterized in that it consists of the following successive layers: • (1) GaN passivation/contact layer, thickness 3nm, • (2) c) barrier layer: Al xGa 1-xN 0.15xAI 1-xN 0.05xGa 1-xN 0.15 20 3, Si or 3C-SiC substrate. The present invention also relates to a method of manufacturing said HEMT heterostructure by epitaxy on a substrate (8).
(FR)La présente invention concerne une hétérostructure HEMT, qui comprend un substrat (8) et une couche tampon (7), caractérisée en ce qu'elle comprend les couches successives suivantes : • (1) une couche de passivation/contact de GaN, épaisseur de 3 nm, • (2) c) une couche barrière : AlxGa1-xN 0,15xAl1-xN 0,05xGa 1-xN 0,152O3, Si ou 3C-SiC. La présente invention concerne également un procédé de fabrication de ladite hétérostructure HEMT par épitaxie sur un substrat (8).
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG).
Publication Language: English (EN)
Filing Language: English (EN)