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Latest bibliographic data on file with the International Bureau   

Pub. No.: WO/2013/120010 International Application No.: PCT/US2013/025425
Publication Date: 15.08.2013 International Filing Date: 08.02.2013
IPC:
H01L 29/78 (2006.01) ,H01L 21/336 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29
Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66
Types of semiconductor device
68
controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified, or switched
76
Unipolar devices
772
Field-effect transistors
78
with field effect produced by an insulated gate
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
334
Multistep processes for the manufacture of devices of the unipolar type
335
Field-effect transistors
336
with an insulated gate
Applicants: VISHAY-SILICONIX[US/US]; 2201 Laurelwood Road Santa Clara, California 95054, US
Inventors: AZAM, Misbah, U.; US
TERRILL, Kyle; US
Agent: GALLENSON, Mavis, S.; 5670 Wilshire Boulevard, Suite 2100 Los Angeles, California 90036, US
Priority Data:
13/370,24309.02.2012US
Title (EN) MOSFET TERMINATION TRENCH
(FR) TRANCHÉE DE TERMINAISON DE MOSFET
Abstract:
(EN) A method, in one embodiment, can include forming a core trench and a termination trench in a substrate. The termination trench is wider than the core trench. In addition, a first oxide can be deposited that fills the core trench and lines the sidewalls and bottom of the termination trench. A first polysilicon can be deposited into the termination trench. A second oxide can be deposited above the first polysilicon. A mask can be deposited above the second oxide and the termination trench. The first oxide can be removed from the core trench. A third oxide can be deposited that lines the sidewalls and bottom of the core trench. The first oxide within the termination trench is thicker than the third oxide within the core trench.
(FR) La présente invention concerne, dans un mode de réalisation, un procédé pouvant comprendre la formation d'une tranchée centrale et d'une tranchée de terminaison dans un substrat. La tranchée de terminaison est plus large que la tranchée centrale. En outre, un premier oxyde peut être déposé pour remplir la tranchée centrale et pour revêtir les parois latérales et le fond de la tranchée de terminaison. Un premier polysilicium peut être déposé dans la tranchée de terminaison. Un deuxième oxyde peut être déposé au-dessus du premier polysilicium. Un masque peut être déposé au-dessus du deuxième oxyde et de la tranchée de terminaison. Le premier oxyde peut être éliminé de la tranchée centrale. Un troisième oxyde peut être déposé pour revêtir les parois latérales et le fond de la tranchée centrale. Le premier oxyde se trouvant dans la tranchée de terminaison est plus épais que le troisième oxyde se trouvant dans la tranchée centrale.
front page image
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG)
Publication Language: English (EN)
Filing Language: English (EN)