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1. (WO2013119846) MULTI-FREE LAYER MTJ AND MULTI-TERMINAL READ CIRCUIT WITH CONCURRENT AND DIFFERENTIAL SENSING

Pub. No.:    WO/2013/119846    International Application No.:    PCT/US2013/025191
Publication Date: Fri Aug 16 01:59:59 CEST 2013 International Filing Date: Fri Feb 08 00:59:59 CET 2013
IPC: G11C 11/16
G11C 11/56
H01L 27/22
Applicants: QUALCOMM INCORPORATED
Inventors: LI, Xia
WU, Wenqing
KIM, Jung Pill
ZHU, Xiaochun
KANG, Seung H.
MADALA, Raghu Sagar
YUEN, Kendrick H.
Title: MULTI-FREE LAYER MTJ AND MULTI-TERMINAL READ CIRCUIT WITH CONCURRENT AND DIFFERENTIAL SENSING
Abstract:
A multi-free layer magnetic tunnel junction (MTJ) cell includes a bottom electrode layer, an antiferromagnetic layer on the bottom electrode layer, a fixed magnetization layer on the antiferromagnetic layer and a barrier layer on the fixed magnetization layer. A first free magnetization layer is on a first area of the barrier layer, and a capping layer is on the first free magnetization layer. A free magnetization layer is on a second area of the barrier layer, laterally displaced from the first area, and a capping layer is on the second free magnetization layer. Optionally current switches establish a read current path including the first free magnetization layer concurrent with not establishing a read current path including the second free magnetization layer. Optionally current switches establishing a read current path including the first and second free magnetization layer.