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1. (WO2013118813) SEMICONDUCTOR POWER CONVERSION DEVICE

Pub. No.:    WO/2013/118813    International Application No.:    PCT/JP2013/052844
Publication Date: Fri Aug 16 01:59:59 CEST 2013 International Filing Date: Fri Feb 08 00:59:59 CET 2013
IPC: H02M 7/12
H02M 7/06
H02M 7/08
Applicants: TOSHIBA MITSUBISHI-ELECTRIC INDUSTRIAL SYSTEMS CORPORATION
東芝三菱電機産業システム株式会社
Inventors: LI, Tianjian
李 天健
TSUKAKOSHI, Masahiko
塚越 昌彦
Title: SEMICONDUCTOR POWER CONVERSION DEVICE
Abstract:
Provided is a semiconductor power conversion device of a hybrid configuration in which a diode rectifier and an IGBT rectifier are connected with an AC reactor interposed therebetween, with which the appropriate AC reactor is chosen. The semiconductor power conversion device is configured with: a diode rectifier (2) which receives AC power from an AC power source via an input transformer (1), converts the AC power to DC, and supplies same to a load; an arc self-extinction rectifier (3) which receives AC input from the AC input terminal of the diode rectifier (2) via an AC reactor (3), and wherein the DC side thereof is directly connected to the output of the diode rectifier (2); and a control means for controlling such that each arc self-extinction semiconductor element which configures the arc self-extinction rectifier (3) supplies electricity in a 120-degree electricity supply period which is the same as that for the diodes of the diode rectifier (2). The inductance of the AC reactor (3) is greater than or equal to a first prescribed value whereat the di/dt tolerance of the diode rectifier (2) can be ensured, and less than or equal to a second prescribed value such that the capacitance reduction rate of an arc self-extinction rectifier (4) due to back flow current is less than or equal to a target value.