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1. (WO2013118642) INORGANIC POLYSILAZANE RESIN
Latest bibliographic data on file with the International Bureau   

Pub. No.: WO/2013/118642 International Application No.: PCT/JP2013/052312
Publication Date: 15.08.2013 International Filing Date: 01.02.2013
IPC:
C01B 21/082 (2006.01) ,H01L 21/316 (2006.01)
C CHEMISTRY; METALLURGY
01
INORGANIC CHEMISTRY
B
NON-METALLIC ELEMENTS; COMPOUNDS THEREOF
21
Nitrogen; Compounds thereof
082
Compounds containing nitrogen and non-metals
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30
Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
31
to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After-treatment of these layers; Selection of materials for these layers
314
Inorganic layers
316
composed of oxides or glassy oxides or oxide-based glass
Applicants: AZ ELECTRONIC MATERIALS (LUXEMBOURG) S. a. r. l.[LU/LU]; 32-36, Boulevard d'Avranches 1160 Luxembourg,, LU
Inventors: FUJIWARA, Takashi; JP
GROTTENMUELLER, Ralf; DE
KANDA, Takashi; JP
NAGAHARA, Tatsuro; JP
Agent: KANAO Hiroki; KANAE INTERNATIONAL PATENT OFFICE, Matsuo Bldg., 2nd Floor, 1-25-3, Hongo, Bunkyo-ku, Tokyo 1130033, JP
Priority Data:
2012-02506608.02.2012JP
Title (EN) INORGANIC POLYSILAZANE RESIN
(FR) RÉSINE POLYSILAZANE INORGANIQUE
(JA) 無機ポリシラザン樹脂
Abstract:
(EN) An inorganic polysilazane resin of the present invention has an Si/N ratio (i.e., a ratio of contained silicon atoms to contained nitrogen atoms) of 1.30 or more. The inorganic polysilazane resin having such a high Si content can be produced by, for example, a method in which an inorganic polysilazane compound containing both Si-NH and Si-Cl is heated to react NH with Cl, a method in which a silazane oligomer (polymer) that leaves no Si-Cl bond is synthesized and a dihalosilane is added to the synthesized silazane oligomer (polymer) to perform a thermal reaction, and the like. A siliceous film can be formed by, for example, applying a coating composition containing the inorganic polysilazane resin onto a base plate and then dried and the dried product is then oxidized by bringing the dried product into contact with water vapor or hydrogen peroxide vapor and water vapor under heated conditions.
(FR) Une résine polysilazane inorganique de la présente invention a un rapport Si/N (c'est-à-dire, un rapport d'atomes de silicium contenus par rapport aux atomes d'azote contenus) de 1,30 ou plus. Une résine polysilazane inorganique présentant une teneur tellement élevée en Si peut être obtenue, par exemple, par un procédé dans lequel un composé polysilazane inorganique contenant à la fois du Si-NH et du Si-Cl est chauffé pour faire réagir le NH avec le Cl, un procédé dans lequel un oligomère de silazane (polymère) qui ne laisse pas de liaison Si-Cl est synthétisé et un dihalosilane est ajouté à l'oligomère de silazane synthétisé (polymère) afin d'effectuer une réaction thermique, etc. Un film siliceux peut être réalisé, par exemple, par application d'une composition de revêtement contenant la résine polysilazane inorganique sur une plaque de base et ensuite par séchage, et le produit séché est ensuite oxydé en mettant le produit séché en contact avec de la vapeur d'eau ou de la vapeur de peroxyde d'hydrogène et de la vapeur d' eau dans des conditions de chauffage.
(JA) 本発明の無機ポリシラザン樹脂は、含まれるケイ素原子と窒素原子の比率Si/Nが1.30以上である無機ポリシラザン樹脂である。このようなSi含有量の高い無機ポリシラザン樹脂は、例えば、Si-NHとSi-Clをともに含む無機ポリシラザン化合物を加熱し、NHとClを反応させる方法、Si-Cl結合を残さないシラザンオリゴマー(ポリマー)を合成し、これにジハロシランを加えて熱反応させる方法などにより製造することができる。シリカ質膜は、例えば、前記無機ポリシラザン樹脂を含有するコーティング組成物を基板に塗布し、乾燥後、加熱した状態で水蒸気、或いは過酸化水素蒸気および水蒸気と接触させることにより酸化することで形成される。
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)