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1. (WO2013118571) SEMICONDUCTOR LIGHT EMISSION DEVICE
Latest bibliographic data on file with the International Bureau   

Pub. No.: WO/2013/118571 International Application No.: PCT/JP2013/051174
Publication Date: 15.08.2013 International Filing Date: 22.01.2013
IPC:
H01L 33/58 (2010.01) ,H01L 33/50 (2010.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33
Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
48
characterised by the semiconductor body packages
58
Optical field-shaping elements
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33
Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
48
characterised by the semiconductor body packages
50
Wavelength conversion elements
Applicants:
株式会社小糸製作所 KOITO MANUFACTURING CO., LTD. [JP/JP]; 東京都港区高輪4丁目8番3号 8-3, Takanawa 4-chome, Minato-ku, Tokyo 1088711, JP
Inventors:
杉森 正吾 SUGIMORI Shogo; JP
久保山 治 KUBOYAMA Osamu; JP
大長 久芳 DAICHO Hisayoshi; JP
Agent:
特許業務法人 信栄特許事務所 SHIN-EI PATENT FIRM, P.C.; 東京都港区西新橋一丁目7番13号 虎ノ門イーストビルディング8階 Toranomon East Bldg. 8F, 7-13, Nishi-Shimbashi 1-chome, Minato-ku, Tokyo 1050003, JP
Priority Data:
2012-02317706.02.2012JP
Title (EN) SEMICONDUCTOR LIGHT EMISSION DEVICE
(FR) DISPOSITIF ÉLECTROLUMINESCENT À SEMI-CONDUCTEUR
(JA) 半導体発光装置
Abstract:
(EN) Provided is a semiconductor light emission device (1) having: a substrate (2); semiconductor light-emitting elements (3) for beaming light having a peak wavelength in a wavelength region of 380 to 480 nm; and a mold member (4) including phosphors (5, 6) which are excited by light beamed from the semiconductor light-emitting elements (3) and emit visible light; the mold member (4) being formed so that the index A = H/(s/n) satisfies 0.3 ≤ A ≤ 6, where H represents the height (mm) of the mold member (4) from the substrate (2), s represents the square root (mm) of the contact area between the substrate (2) and the mold member (4), and n represents the number of semiconductor light-emitting elements (3) covered by the mold member (4).
(FR) L'invention porte sur un dispositif électroluminescent à semi-conducteur (1) qui présente : un substrat (2) ; des éléments électroluminescents à semi-conducteur (3) pour former un faisceau de lumière ayant une longueur d'onde de pic dans un domaine de longueur d'onde allant de 380 à 480 nm ; un élément moulé (4) qui comprend des luminophores (5, 6) qui sont excités par la lumière rayonnant à partir des éléments électroluminescents à semi-conducteur (3) et qui émettent de la lumière visible ; l'élément moulé (4) étant formé de façon à ce que l'indice A = H/(s/n) satisfasse à la relation 0,3 ≤ A ≤ 6, H représentant la hauteur (mm) de l'élément moulé (4) à partir du substrat (2), s représentant la racine carrée (mm) de la surface de contact entre le substrat (2) et l'élément moulé (4) et n représentant le nombre d'éléments électroluminescents à semi-conducteur (3) recouverts par l'élément moulé (4).
(JA) 基板2と、380nm~480nmの波長域にピーク波長を有する光を出射する半導体発光素子3と、半導体発光素子3から出射した光により励起されて可視光を発する蛍光体5,6を含むモールド部材4と、を有し、モールド部材4は、モールド部材4の基板2からの高さH[mm]と、基板2とモールド部材4との接触面積の平方根s[mm]と、モールド部材4に覆われた半導体発光素子3の個数nとしたとき、指標A=H/(s/n)が、0.3≦A≦6を満たすように形成されている半導体発光装置1が提供される。
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)