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1. (WO2013118249) METAL OR SEMICONDUCTOR MELT REFINEMENT METHOD, AND VACUUM REFINEMENT DEVICE

Pub. No.:    WO/2013/118249    International Application No.:    PCT/JP2012/052647
Publication Date: Fri Aug 16 01:59:59 CEST 2013 International Filing Date: Tue Feb 07 00:59:59 CET 2012
IPC: C01B 33/037
Applicants: SILICIO FERROSOLAR S.L.
シリシオ フェロソラ-ル有限会社
KISHIDA Yutaka
岸田 豊
DOHNOMAE Hitoshi
堂野前 等
KONDO Jiro
近藤 次郎
GOTO Kiyoshi
後藤 潔
OHASHI Wataru
大橋 渡
Inventors: KISHIDA Yutaka
岸田 豊
DOHNOMAE Hitoshi
堂野前 等
KONDO Jiro
近藤 次郎
GOTO Kiyoshi
後藤 潔
OHASHI Wataru
大橋 渡
Title: METAL OR SEMICONDUCTOR MELT REFINEMENT METHOD, AND VACUUM REFINEMENT DEVICE
Abstract:
An objective of the present invention is, in refining a metal or a semiconductor melt, without impairing refining efficiency, to alleviate wear and tear commensurate with unevenness in a crucible caused by instability in melt flow, and to allow safe operation over long periods of time such that leakages from the crucible do not occur. Provided is a metal or semiconductor melt refining method, in which, by using an AC resistance heating heater as a crucible heating method, the melt is heat retained and mixed by a rotating magnetic field which is generated by the resistance heating heater. The metal or semiconductor melt refinement method and a vacuum refinement device which is optimal for the refinement method are characterized in that, in order that a fluid instability does not occur in the boundary between the melt and the bottom face of the crucible when the melt is rotated by the rotating magnetic field, with a kinematic viscosity coefficient of the melt designated ν (m2/sec), the radius of the fluid surface of the melt designated R (m), and the rotational angular velocity of the melt designated Ω (rad/sec), the operation is carried out such that the value of a Reynolds number (Re) which is defined as Re=R×(Ω/ν)^(1/2) does not exceed 600.