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1. (WO2013117955) METHOD FOR THE DEPOSITION OF A RUTHENIUM CONTAINING FILM USING ARENE DIAZADIENE RUTHENIUM(0) PRECURSORS
Latest bibliographic data on file with the International Bureau   

Pub. No.: WO/2013/117955 International Application No.: PCT/IB2012/002554
Publication Date: 15.08.2013 International Filing Date: 30.11.2012
IPC:
C23C 16/18 (2006.01) ,C07F 15/00 (2006.01) ,H01L 21/285 (2006.01)
C CHEMISTRY; METALLURGY
23
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
C
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16
Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (CVD) processes
06
characterised by the deposition of metallic material
18
from metallo-organic compounds
C CHEMISTRY; METALLURGY
07
ORGANIC CHEMISTRY
F
ACYCLIC, CARBOCYCLIC, OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
15
Compounds containing elements of the 8th Group of the Periodic System
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
28
Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/268158
283
Deposition of conductive or insulating materials for electrodes
285
from a gas or vapour, e.g. condensation
Applicants:
GATINEAU, Julien [FR/JP]; JP
LANSALOT-MATRAS, Clément [FR/KR]; KR
L'AIR LIQUIDE, SOCIETE ANONYME POUR L'ETUDE ET L'EXPLOITATION DES PROCEDES GEORGES CLAUDE [FR/FR]; 75 Quai d'Orsay F-75007 Paris, FR
Inventors:
GATINEAU, Julien; JP
LANSALOT-MATRAS, Clément; KR
Agent:
DE VLEESCHAUWER, Natalie; L'Air Liquide S.A pour l'Etude et l'Exploitation des Procédés Georges Claude Direction de la Propriété Intellectuelle 75, Quai d'Orsay F-75321 Paris Cedex 07, FR
Priority Data:
61/595,78807.02.2012US
Title (EN) METHOD FOR THE DEPOSITION OF A RUTHENIUM CONTAINING FILM USING ARENE DIAZADIENE RUTHENIUM(0) PRECURSORS
(FR) PROCÉDÉ DE DÉPÔT D'UN FILM CONTENANT DU RUTHÉNIUM AU MOYEN DE PRÉCURSEURS ARÈNE DIAZADIÈNE RUTHÉNIUM(0)
Abstract:
(EN) The invention concerns the use of ruthenium containing precursors having the formula (1) wherein R1, R2... R10 are independently selected from H, C1-C4 linear, branched, or cyclic alkyl group, C1-C4 linear, branched, or cyclic alkylsilyl group (mono, bis, or trisalkyi), C1-C4 linear, branched, or cyclic alkylamino group, or a C1-C4 linear, branched, or cyclic fiuoroalkyi group (totally fluorinated or not); for the deposition of a Ru containing film on a substrate.
(FR) L'invention concerne l'utilisation, pour le dépôt d'un film à base de Ru sur un substrat, de ruthénium contenant des précurseurs ayant la formule (1) dans laquelle R1, R2... R10 sont sélectionnés indépendamment parmi H, groupe alkyle C1-C4 linéaire, ramifié ou cyclique, groupe alkylsilyle C1-C4 (mono, bis, ou trisalkyle ) linéaire, ramifié ou cyclique, groupe alkylamino C1-C4 linéaire, ramifié ou cyclique, groupe fiuoroalkyle C1-C4 (totalement fluoré ou non) linéaire, ramifié ou cyclique
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG)
Publication Language: English (EN)
Filing Language: English (EN)