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1. (WO2013117765) SEMICONDUCTOR COMPONENTS WITH STEEP PHOSPHORUS PROFILE IN A GERMANIUM LAYER

Pub. No.:    WO/2013/117765    International Application No.:    PCT/EP2013/052699
Publication Date: Fri Aug 16 01:59:59 CEST 2013 International Filing Date: Tue Feb 12 00:59:59 CET 2013
IPC: H01L 29/36
H01L 21/22
H01L 29/167
H01L 29/165
H01L 29/864
H01L 21/329
H01L 31/0288
H01L 31/101
H01L 31/18
H01L 33/02
H01S 5/30
H01L 33/00
H01L 33/34
Applicants: IHP GMBH - INNOVATIONS FOR HIGH PERFORMANCE MICROELECTRONICS / LEIBNIZ-INSTITUT FÜR INNOVATIVE MIKROELEKTRONIK
Inventors: YAMAMOTO, Yuji
TILLACK, Bernd
Title: SEMICONDUCTOR COMPONENTS WITH STEEP PHOSPHORUS PROFILE IN A GERMANIUM LAYER
Abstract:
The invention relates to a semiconductor component and to a method for limiting a dopant diffusion, in particular a phosphorus diffusion in germanium. According to the invention, an Si spike is used for this purpose.