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1. (WO2013117576) METHOD AND DEVICE FOR PASSIVATING SOLAR CELLS WITH AN ALUMINIUM OXIDE LAYER
Latest bibliographic data on file with the International Bureau   

Pub. No.: WO/2013/117576 International Application No.: PCT/EP2013/052298
Publication Date: 15.08.2013 International Filing Date: 06.02.2013
IPC:
C23C 16/40 (2006.01) ,H01L 21/02 (2006.01) ,C23C 16/509 (2006.01) ,H01J 37/32 (2006.01) ,C23C 16/455 (2006.01)
C CHEMISTRY; METALLURGY
23
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
C
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16
Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (CVD) processes
22
characterised by the deposition of inorganic material, other than metallic material
30
Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
40
Oxides
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
C CHEMISTRY; METALLURGY
23
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
C
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16
Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (CVD) processes
44
characterised by the method of coating
50
using electric discharges
505
using radio frequency discharges
509
using internal electrodes
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
J
ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
37
Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
32
Gas-filled discharge tubes
C CHEMISTRY; METALLURGY
23
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
C
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16
Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (CVD) processes
44
characterised by the method of coating
455
characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
Applicants:
SINGULUS TECHNOLOGIES AG [DE/DE]; Hanauer Landstraße 103 63796 Kahl am Main, DE
Inventors:
DIPPELL, Torsten; DE
ROOS, Björn; DE
HOHN, Oliver; DE
DULLWEBER, Thorsten; DE
HARDER, Nils-Peter; DE
SIEBERT, Michael; DE
Agent:
VOSSIUS & PARTNER; Siebertstraße 4 81675 München, DE
Priority Data:
10 2012 201 953.709.02.2012DE
Title (EN) METHOD AND DEVICE FOR PASSIVATING SOLAR CELLS WITH AN ALUMINIUM OXIDE LAYER
(FR) PROCÉDÉ ET DISPOSITIF DE PASSIVATION DE CELLULES SOLAIRES AU MOYEN D'UNE COUCHE D'OXYDE D'ALUMINIUM
(DE) VERFAHREN UND VORRICHTUNG ZUR PASSIVIERUNG VON SOLARZELLEN MIT EINER ALUMINIUMOXID-SCHICHT
Abstract:
(EN) The invention relates to a method for coating a substrate (10) with an AlOx layer (12), in particular an Al2O3 layer, said method comprising the following method steps: (a) providing an inductively coupled plasma source (ICP source) (20) having a reaction chamber (22) and at least one RF inductor (24), (b) introducing an aluminium compound, preferably trimethyl aluminium (TMA), into the ICP source, (c) introducing oxygen and/or an oxygen compound as a reactive gas into the ICP source and inductively coupling energy into the ICP source to form a plasma (30), and (d) depositing the AlOx layer on the substrate. The invention also relates to a coating installation for depositing thin layers on a substrate, in particular for carrying out the above method. The coating installation comprises an inductively coupled plasma source (ICP) (20) having a reaction chamber (22) and at least one RF inductor (24), a substrate holder for arranging the substrate in the reaction chamber and channels (26, 28) for introducing the aluminium compound and a reactive gas into the ICP source. The substrate is arranged in the reaction chamber in such a way that the surface to be coated of the substrate is facing the ICP source.
(FR) L'invention concerne un procédé destiné à revêtir un substrat (10) d'une couche de AlOx (12), en particulier d'une couche de Al2O3, comprenant les étapes suivantes: (a) préparation d'une source de plasma couplée inductivement (source ICP) (20) comprenant une chambre de réaction (22) et au moins un inducteur HF (24); (b) envoi d'un composé de l'aluminium, de préférence du triméthylaluminium (TMA), dans la source ICP; (c) envoi d'oxygène et/ou d'un composé de l'oxygène comme gaz réactif dans la source ICP et injection inductive d'énergie dans la source ICP pour former un plasma (30); et (d) dépôt de la couche de AlOx sur le substrat. L'invention concerne également une installation de revêtement pour déposer de minces couches sur un substrat, en particulier pour mettre en œuvre le procédé susmentionné. L'installation de revêtement comprend une source de plasma inductivement couplée (ICP) (20) comprenant une chambre de réaction (22) et au moins un inducteur HF (24), un support de substrat pour disposer le substrat dans la chambre de réaction et des canaux (26, 28) pour envoyer le composé de l'aluminium et un gaz réactif dans la source ICP. Le substrat est disposé dans la chambre de réaction de telle manière que la surface à revêtir du substrat soit orientée vers la source ICP.
(DE) Die Erfindung betrifft ein Verfahren zum Beschichten eines Substrats (10) mit einer AlOx-Schicht (12), insbesondere Al2O3-Schicht, mit den folgenden Verfahrensschritten: (a) Bereitstellen einer induktiv gekoppelten Plasmaquelle (ICP-Quelle) (20) mit einer Reaktionskammer (22) und mindestens einem HF-Induktor (24), (b) Einleiten einer Aluminiumverbindung, vorzugsweise Trimethylaluminium (TMA), in die ICP-Quelle, (c) Einleiten von Sauerstoff und/oder einer Sauerstoffverbindung als Reaktivgas in die ICP-Quelle und induktives Einkoppeln von Energie in die ICP-Quelle zum Ausbilden eines Plasmas (30), und (d) Abscheiden der AlOx-Schicht auf dem Substrat. Die Erfindung betrifft auch eine Beschichtungsanlage zum Abscheiden von dünnen Schichten auf einem Substrat, insbesondere zur Durchführung obigen Verfahrens. Die Beschichtungsanlage umfasst eine induktiv gekoppelte Plasmaquelle (ICP) (20) mit einer Reaktionskammer (22) und mindestens einem HF-Induktor (24), eine Substrathalterung zur Anordnung des Substrats in der Reaktionskammer und Kanäle (26, 28) zum Einleiten der Aluminiumverbindung und eines Reaktivgases in die ICP-Quelle. Das Substrat ist in der Reaktionskammer derart angeordnet, dass die zu beschichtende Oberfläche des Substrats zur ICP-Quelle weist.
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG)
Publication Language: German (DE)
Filing Language: German (DE)