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1. (WO2013117018) P-TYPE CONDUCTIVE SB DOPED SNO2 THIN FILM, TIN OXIDE HOMOGENOUS PN JUNCTION CONTAINING SAME, AND METHODS FOR PREPARATION THEREOF
Latest bibliographic data on file with the International Bureau   

Pub. No.: WO/2013/117018 International Application No.: PCT/CN2012/071302
Publication Date: 15.08.2013 International Filing Date: 20.02.2012
IPC:
H01L 21/203 (2006.01) ,C23C 14/35 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
20
Deposition of semiconductor materials on a substrate, e.g. epitaxial growth
203
using physical deposition, e.g. vacuum deposition, sputtering
C CHEMISTRY; METALLURGY
23
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
C
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
14
Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
22
characterised by the process of coating
34
Sputtering
35
by application of a magnetic field, e.g. magnetron sputtering
Applicants: ZHAO, Xiujian[CN/CN]; CN (UsOnly)
NI, Jiamiao[CN/CN]; CN (UsOnly)
GENG, Shuoqi[CN/CN]; CN (UsOnly)
LIU, Qiming[CN/CN]; CN (UsOnly)
WUHAN UNIVERSITY OF TECHNOLOGY[CN/CN]; No.122 Luoshi Rd., Hongshan District Wuhan, Hubei 430070, CN (AllExceptUS)
Inventors: ZHAO, Xiujian; CN
NI, Jiamiao; CN
GENG, Shuoqi; CN
LIU, Qiming; CN
Agent: HUBEI WUHAN YONGJIA PATENT AGENCY COMPANY; Angela Wong 708 Zhaofu International Building No.717 Wuluo Rd., Wuchang District Wuhan, Hubei 430070, CN
Priority Data:
201210029709.510.02.2012CN
Title (EN) P-TYPE CONDUCTIVE SB DOPED SNO2 THIN FILM, TIN OXIDE HOMOGENOUS PN JUNCTION CONTAINING SAME, AND METHODS FOR PREPARATION THEREOF
(FR) FILM MINCE DE SNO2 CONDUCTEUR DOPÉ AU SB DE TYPE P, JONCTION PN HOMOGÈNE D'OXYDE D'ÉTAIN LE CONTENANT, ET LEURS PROCÉDÉS DE PRÉPARATION
(ZH) p型导电Sb掺杂SnO2薄膜和含有该薄膜的氧化锡同质pn结及其制备方法
Abstract:
(EN) Provided are a p-type conductive Sb doped SnO2 thin film, a tin oxide homogenous pn junction containing same, and methods for preparation thereof. A method for preparing a p-type Sb doped SnO2 thin film comprises using Sb doped SnO2 ceramic target material and using a magnetron sputtering method to carry out the preparation on a single crystal Si or a quartz glass; and the tin oxide homogenous pn junction is obtained by sputtering and depositing a n-type Sb doped SnO2 thin film onto the p-type Sb doped SnO2 thin film. The p-type conductive Sb doped SnO2 thin film has a stable electrical conductive performance, a high hole concentration, hole mobility and conductivity, having a hole concentration of up to an order of magnitude of 1020cm-3, a conductivity of up to 60S∙cm-1 and at the same time a hole mobility of up to 2-30cm2∙V-1∙s-1, and a high transparency for visible light. The method for preparation thereof has simple processes, has good reproducibility, and is easy to use industrially. The prepared homogenous tin oxide-based transparent pn junction has the current-voltage profile characteristics of a semiconductor pn junction with a wide band gap.
(FR) La présente invention concerne un film mince de SnO2 conducteur dopé au Sb de type p, une jonction pn homogène d'oxyde d'étain le contenant, et leurs procédés de préparation. Un procédé de préparation d'un film mince de SnO2 dopé au Sb de type p comprend l'utilisation d'un matériau cible de céramique SnO2 dopée au Sb et l'utilisation d'un procédé de pulvérisation magnétron dans la mise en œuvre de la préparation sur un seul Si cristallin ou verre de quartz; et la jonction pn homogène d'oxyde d'étain est obtenue en pulvérisant et en déposant un film mince de SnO2 dopé au Sb de type n sur le film mince de SnO2 dopé au Sb de type p. Le film mince de SnO2 conducteur dopé au Sb de type p présente une performance de conduction électrique stable, une concentration de trous, une migration des trous et une conductivité élevées, la concentration des trous allant jusqu'à un ordre de grandeur de 1020 cm-3, la conductivité allant jusqu'à 60 S∙cm-1 et la migration des trous allant en même temps jusqu'à 2-30 cm2∙V-1∙s-1, et une transparence élevée pour la lumière visible. Le procédé de préparation de ceux-ci comprend des processus simples, a une bonne reproductibilité, et est facile à utiliser à l'échelle industrielle. La jonction pn transparente à base d'oxyde d'étain homogène préparée présente les caractéristiques de profil courant-tension d'une jonction pn semiconductrice comprenant une large bande interdite.
(ZH) 提供一种p型导电Sb掺杂SnO2薄膜、包含p型导电Sb掺杂SnO2薄膜的氧化锡同质pn结以及它们的制备方法。p型Sb掺杂SnO2薄膜的制备方法是采用Sb掺杂SnO2陶瓷靶材,采用磁控溅射法在单晶Si或石英玻璃上制备;二氧化锡同质pn结是在p型Sb掺杂SnO2薄膜上溅射沉积n型Sb掺杂SnO2薄膜获得的。p型导电Sb掺杂SnO2薄膜导电性能稳定,空穴浓度、空穴迁移率和电导率高,具有空穴浓度高达1020cm-3数量级、电导率高达60S∙cm-1同时空穴迁移率可高达2~30cm2∙V-1∙s-1、在可见光具有高透明性,且该制备方法的工艺简单,重复性好,易于工业化,所制备的同质氧化锡基的透明pn结,具有宽禁带半导体pn结的伏安曲线特性。
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG)
Publication Language: Chinese (ZH)
Filing Language: Chinese (ZH)