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1. (WO2013116871) MULTI-LAYER METAL SUPPORT
Latest bibliographic data on file with the International Bureau   

Pub. No.: WO/2013/116871 International Application No.: PCT/US2013/024682
Publication Date: 08.08.2013 International Filing Date: 05.02.2013
IPC:
H01L 21/20 (2006.01) ,H01L 27/14 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
20
Deposition of semiconductor materials on a substrate, e.g. epitaxial growth
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27
Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
14
including semiconductor components sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
Applicants:
GTAT CORPORATION [US/US]; 20 Trafalgar Square Nashua, NH 03063, US
Inventors:
MURALI, Venkatesan; US
DINAN Jr., Thomas Edward; US
BABABYAN, Steve; US
PRABHU, Gopal; US
Agent:
MUELLER, Heather; The Mueller Law Office, P.C. 12707 High Bluff Drive, Suite 200 San Diego, CA 92130, US
Priority Data:
13/366,33805.02.2012US
13/558,82626.07.2012US
Title (EN) MULTI-LAYER METAL SUPPORT
(FR) SUPPORT MÉTALLIQUE MULTICOUCHE
Abstract:
(EN) The invention provides a method of forming an electronic device from a lamina that has a coefficient of thermal expansion that is matched or nearly matched to a constructed metal support. In some embodiments the method comprises implanting the top surface of a donor body with an ion dosage to form a cleave plane followed by exfoliating a lamina from the donor body. After exfoliating the lamina, a flexible metal support that has a coefficient of thermal expansion with a value that is within 10% of the value of the coefficient of thermal expansion of the lamina is constructed on the lamina. In some embodiments the coefficients of thermal expansion of the metal support and the lamina are within 10% or within 5% of each other between the temperatures of 100 and 600 °C.
(FR) L'invention concerne un procédé de formation d'un dispositif électronique à partir d'une lamelle ayant un coefficient de dilatation thermique qui correspond totalement ou approximativement à celui d'un support métallique réalisé. Dans certains modes de réalisation, le procédé consiste à implanter une dose d'ions dans la surface supérieure d'un corps donneur pour former un plan de clivage, puis à séparer une lamelle du corps donneur. Après séparation de la lamelle, un support métallique souple ayant un coefficient de dilatation thermique d'une valeur différant de plus ou moins 10% de la valeur du coefficient de dilatation thermique de la lamelle est réalisé sur la lamelle. Dans certains modes de réalisation, les coefficients de dilatation thermique du support métallique et de la lamelle diffèrent de plus ou moins 10% ou de plus ou moins 5% l'un de l'autre dans une plage de température allant de 100 à 600° C.
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG)
Publication Language: English (EN)
Filing Language: English (EN)