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1. (WO2013116495) METHOD OF DEPOSITING METALS USING HIGH FREQUENCY PLASMA

Pub. No.:    WO/2013/116495    International Application No.:    PCT/US2013/024107
Publication Date: Fri Aug 09 01:59:59 CEST 2013 International Filing Date: Fri Feb 01 00:59:59 CET 2013
IPC: C23C 16/50
C23C 16/448
C23C 16/455
Applicants: APPLIED MATERIALS, INC.
MA, Paul F.
LIU, Guojun
LAKSHMANAN, Annamalai
WU, Dien-Yeh
SUBRAMANI, Anantha K.
Inventors: MA, Paul F.
LIU, Guojun
LAKSHMANAN, Annamalai
WU, Dien-Yeh
SUBRAMANI, Anantha K.
Title: METHOD OF DEPOSITING METALS USING HIGH FREQUENCY PLASMA
Abstract:
Methods for depositing metal layers, and more specifically TaN layers, using CVD and ALD techniques are provided. In one or more embodiments, the method includes sequentially exposing a substrate to a metal precursor, or more specifically a tantalum precursor, followed by a high frequency plasma.