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1. (WO2013116168) METHOD FOR MAKING A REDISTRIBUTED ELECTRONIC DEVICE USING A TRANSFERRABLE REDISTRIBUTION LAYER
Latest bibliographic data on file with the International Bureau   

Pub. No.: WO/2013/116168 International Application No.: PCT/US2013/023519
Publication Date: 08.08.2013 International Filing Date: 29.01.2013
IPC:
H01L 21/683 (2006.01) ,H01L 21/66 (2006.01) ,H01L 23/522 (2006.01) ,H01L 21/768 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
67
Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
683
for supporting or gripping
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
66
Testing or measuring during manufacture or treatment
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
23
Details of semiconductor or other solid state devices
52
Arrangements for conducting electric current within the device in operation from one component to another
522
including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
70
Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in or on a common substrate or of specific parts thereof; Manufacture of integrated circuit devices or of specific parts thereof
71
Manufacture of specific parts of devices defined in group H01L21/7086
768
Applying interconnections to be used for carrying current between separate components within a device
Applicants:
HARRIS CORPORATION [US/US]; 1025 W. Nasa Blvd., MS A-11I Melbourne, FL 32919, US (AllExceptUS)
Inventors:
REED, Thomas; US
HERNDON, David; US
DUNPHY, Suzanne; US
Agent:
YATSKO, Michael, S.; Harris Corporation 1025 W. Nasa Blvd., MS A-11I Melbourne, FL 32919, US
Priority Data:
13/364,83602.02.2012US
Title (EN) METHOD FOR MAKING A REDISTRIBUTED ELECTRONIC DEVICE USING A TRANSFERRABLE REDISTRIBUTION LAYER
(FR) PROCÉDÉ DE FABRICATION D'UN DISPOSITIF ÉLECTRONIQUE REDISTRIBUÉ AU MOYEN D'UNE COUCHE DE REDISTRIBUTION POUVANT ÊTRE TRANSFÉRÉE
Abstract:
(EN) A method of making an electronic device with a redistribution layer includes providing an electronic device (11,12) having a first pattern of contact areas(13), and forming a redistribution layer (29) on a temporary substrate (20). The redistribution layer (29) has a second pattern of contact areas (27) matching the first pattern of contact areas (13), and a third pattern of contact areas (23) different than the second pattern of contact areas (27). The second pattern of contact areas (27) is coupled to the third pattern of contact areas (23) through a plurality of stacked conductive and insulating layers. The first pattern of contact areas (13) is coupled to the second pattern of contact areas (27) on the transferable redistribution layer (29). The temporary substrate (20) is then removed to thereby form a redistributed electronic device.
(FR) L'invention concerne un procédé de fabrication d'un dispositif électronique au moyen d'une couche de redistribution, consistant à fournir un dispositif électronique (11, 12) présentant une première configuration de zones de contact (13), et à former une couche de redistribution (29) sur un substrat temporaire (20). La couche de redistribution (29) présente une deuxième configuration de zones de contact (27) correspondant à la première configuration de zones de contact (13) et une troisième configuration de zones de contact (23) différente de la deuxième configuration de zones de contact (27). La deuxième configuration de zones de contact (27) est couplée à la troisième configuration de zones de contact (23) par une pluralité de couches conductrices et isolantes empilées. La première configuration de zones de contact (13) est couplée à la deuxième configuration de zones de contact (27) sur la couche de redistribution (29) pouvant être distribuée. Le substrat temporaire (20) est alors retiré pour former de ce fait un dispositif électronique redistribué.
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG)
Publication Language: English (EN)
Filing Language: English (EN)